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Versatile component for switching, amplifying, and bufferin
MO-036ABManufacturer:
Mfr.Part #:
IRFG6110
Datasheet:
Pbfree Code:
No
Part Life Cycle Code:
Transferred
Pin Count:
14
ECCN Code:
EAR99
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The IRFG6110 is a Trans MOSFET N/P-CH 100V from Infineon, packaged in MO-036AB-14. This component is designed for general-purpose applications that require high voltage and current handling. With a maximum voltage rating of 100V and a continuous current rating of 1A (N-channel) or 0.75A (P-channel), it can be used in various electronic circuits. The IRFG6110 features a dual N/P-channel structure, allowing for both high-side and low-side switching capabilities. Its compact 14-pin package makes it suitable for space-constrained designs. The device is designed to operate in a wide temperature range, making it suitable for use in various industrial and automotive applications. In summary, the IRFG6110 is a versatile Trans MOSFET that can be used in a variety of applications where high voltage and current handling are required.
The package type of IRFG6110 is MO-036AB-14, which is a 14-pin surface-mount device (SMD) package.
The IRFG6110 is a Trans MOSFET N/P-CH 100V from Infineon, with a package type MO-036AB-14. It has a pin count of 14.
According to the datasheet, the pin functions are:
Please note that the exact pin functions may vary depending on the specific application and usage.
The manufacturer of the IRFG6110 is Infineon.
The IRFG6110 is a N-channel/P-channel power MOSFET, suitable for general-purpose applications that require high voltage and current switching. Typical application areas include:
Its 100V rating and 1A/0.75A current handling make it a versatile component for various electronic designs.
Based on the product information, IRFG6110 is a Trans MOSFET from Infineon. Equivalent products can be found by searching for similar specifications. Some possible alternatives include:
Please note that these are just suggestions and may not be exact equivalents.
Pbfree Code | No | Part Life Cycle Code | Transferred |
Pin Count | 14 | Reach Compliance Code | |
ECCN Code | EAR99 | Additional Feature | HIGH RELIABILITY |
Avalanche Energy Rating (Eas) | 75 mJ | Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 1 A |
Drain-source On Resistance-Max | 0.8 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | MO-036AB | JESD-30 Code | R-CDIP-T14 |
JESD-609 Code | e0 | Number of Elements | 4 |
Number of Terminals | 14 | Operating Mode | ENHANCEMENT MODE |
Peak Reflow Temperature (Cel) | NOT APPLICABLE | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Pulsed Drain Current-Max (IDM) | 4 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | TIN LEAD |
Terminal Form | THROUGH-HOLE | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | ID max | -0.75 A |
Polarity | 2N / 2P | Qualification | DLA |
VBRDSS min | 100.0 V | QPL Part Number | 2N7336 |
RDS (on) max | 1400.0 mΩ | Language | SPICE |
Download Model | https://www.infineon.com/cms/dgdl/Infineon-Spice_File_IRFG6110-N-SimulationModels-v01_01-EN.spi?fileId=8ac78c8c84f2c0670184f4eab8cb0ec3 | Product Category | High reliability power MOSFETs |
Package/Case | MO-036AB |
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