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IRF7353D1 +BOM

High-power MOSFET for demanding applications up to 30V and 6.5A

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRF7353D1
Datasheet:

IRF7353D1 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

6.5A (Ta)
EDA/CAD Models:

Request Free CAD Models for IRF7353D1

IRF7353D1 Information

Avaq Semiconductor offers the highly versatile and reliable IRF7353D1 driver, produced by Infineon Technologies. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IRF7353D1.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	32mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 25 V
FET Feature	Schottky Diode (Isolated)	Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Package/Case	SOIC-8