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N-Channel 25 V 38A (Ta), 200A (Tc) 2.8W (Ta), 96W (Tc) Surface Mount DIRECTFET™ MX
WDSON-5Manufacturer:
Mfr.Part #:
IRF6717MTRPBF
Datasheet:
Series: IRF6717M
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
25 V
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The IRF6717MTRPBF is a highly efficient and reliable 30V Dual N-Channel HEXFET Power MOSFET suitable for a wide range of power management applications. With a low on-resistance of 12mΩ (max) at a Vgs of 10V, this MOSFET ensures minimal power loss and high efficiency in switching operations. Its fast switching speed and low gate charge make it perfect for high-frequency applications, delivering superior performance in mobile devices, battery-powered circuits, and other power management systems. The compact and thermally efficient PowerPAK SO-8 package further enhances its thermal performance, eliminating the need for additional heatsinking
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 25 V |
Current - Continuous Drain (Id) @ 25°C | 38A (Ta), 200A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.25mOhm @ 38A, 10V | Vgs(th) (Max) @ Id | 2.35V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 4.5 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6750 pF @ 13 V | FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 96W (Tc) | Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | IRF6717 |
RHoS | yes | PBFree | yes |
HalogenFree | yes | Package/Case | WDSON-5 |
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