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IRF620PBF +BOM

IRF620PBF is a 3-pin N-channel MOSFET, capable of handling up to 200 volts and 5.2 amps of current in a TO-220AB package

Manufacturer:

Vishay Intertechnology, Inc
Mfr.Part #:

IRF620PBF
Datasheet:

IRF620PBF Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

200 V
Current - Continuous Drain (Id) @ 25°C:

5.2A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRF620PBF

IRF620PBF Information

Description

Here's a concise introduction to the IRF620PBF: The IRF620PBF is a single N-channel power MOSFET from Vishay Intertech designed for high-performance applications. It features a TO-220AB flange mount package with a 200V rating and 0.8 Ohms on-state resistance, making it suitable for switching and linear applications up to 200V. The IRF620PBF boasts several key features such as ease of paralleling, simplified drive requirements, repetitive avalanche ratings, low on-state current, and fast switching speed. Additionally, it has high surge immunity, low thermal impedance, and is fully encapsulated. This makes it an ideal choice for applications that require reliable, efficient, and cost-effective solutions.

Features

The IRF620PBF features include:

Easily paralleled
Simplified drive requirements
Repetitive avalanche rated
Low on-state current

These features make it suitable for applications that require high power, low voltage drop, and fast switching speed. The device is designed to operate in a wide range of applications, including motor control, power supplies, and DC-DC converters.

Package

The package type of IRF620PBF is TO-220AB.

Pinout

The IRF620PBF is a single N-channel power MOSFET with a TO-220AB package. It has 3 pins:

Pin 1: Drain (D)
Pin 2: Source (S)
Pin 3: Gate (G)

This device is designed for high-power switching applications and can handle up to 200V and 8A of current.

Manufacturer

The manufacturer of the IRF620PBF is Vishay Intertech, a leading global provider of semiconductors and passive components.

Equivalent

The equivalent products of IRF620PBF are:

STP16NF06L
NXP BUK206-50A
ON SEMICONDUCTOR NTHB306E3
LITE-ON LA6N60
IXYS IXFN40N120B

Please note that the equivalent products may vary depending on the specific application and requirements.

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	260 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IRF620	Package/Case	TO-220