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IRF2807PBF Single FETs, MOSFETs by Infineon Technologies Corporation (NRND Lifecycle)

IRF2807PBF
3d-img IRF2807PBF Image

IRF2807PBF is a MOSFET device designed to efficiently regulate current with a voltage rating of 75V and a maximum current capacity of 82A

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Reference Price (USD)

Reference Price (USD)

Quantity

Unit Price

Ext. Price

1+

$0.6680

$0.67

10+

$0.5550

$5.55

50+

$0.4530

$22.65

100+

$0.3960

$39.60

500+

$0.3620

$181.00

1000+

$0.3440

$344.00

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IRF2807PBF Information

Description

Introduction to the IRF2807PBF: The Infineon IRF2807PBF is a high-performance N-channel MOSFET designed for demanding applications up to 75V and 82A continuous current. Key features include rugged construction, low EMI emissions, fast switching speed, low input capacitance, magnetic shielding, and efficient power management. Common applications of the IRF2807PBF include high voltage systems in wireless communication, solar power systems, and power control systems in smart homes or industrial automation.

Package

The package type of IRF2807PBF is TO-220AB, a through-hole package with three legs.

Pinout

The IRF2807PBF is a N-channel power MOSFET from Infineon. It has the following specifications:


  • Rough Voltage (Vdsmax)
  • : 75 V
  • Max Absolute Continuous Current (Id)
  • : 82 A
  • Temperature Coefficient (Tc)
  • ): -0.063°C/log(10W)
  • Pin count and function are not provided in the given information. To access pinout details, consult Infineon's datasheet or technical support website.

    Manufacturer

    The manufacturer of the IRF2807PBF is Infineon Technologies, a global semiconductor company. Infineon specializes in power electronics, sensors, and connectivity solutions for various industries, including automotive, industrial automation, and smart grids. With a focus on innovation and sustainability, Infineon contributes to the digitalization of society while reducing environmental impacts.

    Applications

    The IRF2807PBF is a versatile N-channel MOSFET, suitable for high voltage applications like wireless communication, solar power systems, and power control systems. Its low power consumption makes it ideal for compact electronic devices and integrated circuit design.

    Equivalent

    The equivalent product of IRF2807PBF is likely another N-channel MOSFET with similar voltage rating, current capacity, and package type. Look for Infineon or other reputable manufacturer's offerings in the TO-220 or equivalent package size.

    IRF2807PBF

    Market Dynamics

    Price Trend

    Pricing Insight: From 2018 to 2024, the market price has been highly volatile, averaging 0.4247 USD.

    Historical Price Trend Data
    Date Average price (USD)
    2018 0.4600
    2019 0.3500
    2021 0.6250
    2022 0.5700
    2023 0.2500
    2024 0.2930

    Quotation Frequency

    Sourcing Activity: Between 2018 and 2024, this component received over 8 quotation requests, indicating highly active market procurement.

    Quotation and RFQ Frequency Data
    Date Quotation requests (times)
    2018 1
    2019 1
    2021 2
    2022 2
    2023 1
    2024 1

    IRF2807PBF Technical Details

    Device Attribute Attribute Value Device Attribute Attribute Value
    Technology Si Mounting Style Through Hole
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 75 V Id - Continuous Drain Current 82 A
    Rds On - Drain-Source Resistance 13 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
    Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 106.7 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
    Pd - Power Dissipation 200 W Channel Mode Enhancement
    Configuration Single Height 15.65 mm
    Length 10 mm Package/Case TO-220-3
    Factory Pack Quantity 1000 Subcategory MOSFETs
    Transistor Type 1 N-Channel Width 4.4 mm
    Unit Weight 0.068784 oz

    IRF2807PBF FAQs

    1.Q: What is the recommended gate drive voltage for AUIRF4905-1?

    A: 10V is specified for Rds(on) measurement, with max Vgs of ±20V.

    2.Q: Is AUIRF4905-1 RoHS compliant?

    A: Yes, it's compliant with exemptions (EU RoHS).

    3.Q: What is the gate threshold voltage of AUIRF4905-1?

    A: Typical Vgs(th) is 4V, with minimum 2V at specified test conditions.

    4.Q: What package does AUIRF4905-1 use?

    A: TO-220AB through-hole package with 3 pins, dimensions 10.67x4.83x9.02mm(max).

    5.Q: What is the thermal resistance of AUIRF4905-1?

    A: Junction-to-case thermal resistance is 0.75°C/W.

    6.Q: What are the absolute maximum ratings for AUIRF4905-1?

    A: Vds=75V, Vgs=±20V, Id=82A (continuous), Pd=150W, TJ=-55 to +175°C.

    7.Q: What is the maximum drain current rating of AUIRF4905-1?

    A: 82A continuous current at 25°C, with 280A pulsed current capability.

    8.Q: What are typical applications for AUIRF4905-1?

    A: DC-DC converters, motor control, power management in industrial/automotive systems, and high-current switching applications.

    9.Q: What are the key features of AUIRF4905-1 power MOSFET?

    A: N-channel, 75V Vds, 82A continuous current, 13mΩ Rds(on) @10V, 150W power dissipation, and HEXFET technology.

    10.Q: What is the pinout configuration of the Infineon AUIRF4905-1 MOSFET?

    A: Pin 1: Gate (G), Pin 2: Drain/Tab (D), Pin 3: Source (S) in TO-220AB package.

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    Excellent Rated 5 out of 5 stars

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    • E
      E**e

      02/28/2025

      No hidden fees, and the shipping costs are pretty fair.

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      A**n

      02/25/2025

      The parts are excellent quality, and I've never had any trouble with shipping or delivery.

    • M
      M**l

      12/12/2025

      Needed to stock up on common capacitors and resistors. Their prices are fair and they had all the standard values I use ready to ship.

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