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IRF2807PBF

In Stock: 9,749

IRF2807PBF is a MOSFET device designed to efficiently regulate current with a voltage rating of 75V and a maximum current capacity of 82A

Manufacturers:
Infineon Technologies Corporation
Mfr.Part#:
IRF2807PBF
Package/Case:
TO-220-3
Product Type:
Single FETs, MOSFETs
RoHS:
Lifecycle:
NRND
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IRF2807PBF Information

Description

Introduction to the IRF2807PBF: The Infineon IRF2807PBF is a high-performance N-channel MOSFET designed for demanding applications up to 75V and 82A continuous current. Key features include rugged construction, low EMI emissions, fast switching speed, low input capacitance, magnetic shielding, and efficient power management. Common applications of the IRF2807PBF include high voltage systems in wireless communication, solar power systems, and power control systems in smart homes or industrial automation.

Package

The package type of IRF2807PBF is TO-220AB, a through-hole package with three legs.

Manufacturer

The manufacturer of the IRF2807PBF is Infineon Technologies, a global semiconductor company. Infineon specializes in power electronics, sensors, and connectivity solutions for various industries, including automotive, industrial automation, and smart grids. With a focus on innovation and sustainability, Infineon contributes to the digitalization of society while reducing environmental impacts.

Applications

The IRF2807PBF is a versatile N-channel MOSFET, suitable for high voltage applications like wireless communication, solar power systems, and power control systems. Its low power consumption makes it ideal for compact electronic devices and integrated circuit design.

Equivalent

The equivalent product of IRF2807PBF is likely another N-channel MOSFET with similar voltage rating, current capacity, and package type. Look for Infineon or other reputable manufacturer's offerings in the TO-220 or equivalent package size.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	75 V
Id - Continuous Drain Current	82 A	Rds On - Drain-Source Resistance	13 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	106.7 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	200 W
Channel Mode	Enhancement	Configuration	Single
Height	15.65 mm	Length	10 mm
Product Type	MOSFET	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Width	4.4 mm	Unit Weight	0.068784 oz
Package/Case	TO-220-3

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Reference Price（USD）

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Quantity

Unit Price

Ext. Price

$0.668

$0.67

10+

$0.555

$5.55

50+

$0.453

$22.65

100+

$0.396

$39.60

500+

$0.362

$181.00

1000+

$0.344

$344.00

*The prices above are for reference only.

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