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See Technical Specifications

IRF2807 +BOM

TO-220AB N-Channel MOSFET Transistor

Manufacturer:

Infineon
Mfr.Part #:

IRF2807
Datasheet:

IRF2807 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IRF2807

Description

The Infineon IRF2807 is a high-performance N-Channel Power MOSFET transistor, designed for high-power applications like motor control, inverters, and DC-DC converters. It offers low on-state resistance, fast switching speed, and high current capability of up to 82A. The device has a low gate charge, making it suitable for applications requiring minimal power consumption.

The IRF2807 is packaged in a TO-220-3 package and operates with a maximum voltage of 100V. Its features make it an excellent choice for various applications such as:

Switch mode power
Electronic ballasts
Industrial automation
Audio amplifiers
Lighting control circuits
Telecommunication equipment
Power supplies
Battery chargers
Motor control
DC-DC converters
Solar inverters

Features

The IRF2807 features include:

100V, 82A, 2.5mΩ N-Channel Power MOSFET
Low on-state resistance
Fast switching speed
High current capability
Low gate charge

These features make it suitable for high power applications such as motor control, inverters, and DC-DC converters.

Package

The package type of IRF2807 is TO-220-3.

Pinout

The IRF2807 is a TO-220-3 package N-channel power MOSFET with a pin count of 3:

Drain (D)
Gate (G)
Source (S)

It's a 100V, 82A, 2.5mΩ device designed for high-power applications such as motor control, inverters, and DC-DC converters.

Manufacturer

The manufacturer of the IRF2807 is Infineon. Infineon is a global semiconductor leader with more than 45 years of experience in developing innovative solutions for electronic systems. They design, develop, and supply semiconductors for various applications including automotive, industrial power electronics, computing, and more.

Applications

According to the product information, the application areas of IRF2807 are:

Switch mode power
Electronic ballasts
Industrial automation
Audio amplifiers
Lighting control circuits
Telecommunication equipment
Power supplies
Battery chargers
Motor control
DC-DC converters
Solar inverters

These applications leverage the transistor's features, such as low on-state resistance, fast switching speed, and high current capability.

Equivalent

The equivalent products of IRF2807 are typically classified under the same type (N-Channel Power MOSFET TO-220) with similar specifications:

STW60NF100
CSD28615Q4A
FDC6603P

These products may have slightly different parameters, but they share similar characteristics and can be used as alternatives in similar applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	82 A	Rds On - Drain-Source Resistance	13 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	230 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	48 ns	Height	15.65 mm
Length	10 mm	Product Type	MOSFET
Rise Time	64 ns	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	49 ns
Typical Turn-On Delay Time	13 ns	Width	4.4 mm
Unit Weight	0.068784 oz	Package/Case	TO-220-3