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IRF1310N +BOM

N-channel MOSFET,IRF1310N 36A 100V

Manufacturer:

INFINEON
Mfr.Part #:

IRF1310N
Datasheet:

IRF1310N Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Transferred
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for IRF1310N

IRF1310N Information

Description

Here's a concise introduction to the IRF1310N: The IRF1310N is an N-channel MOSFET from Infineon, designed for high-current applications. With a rating of 36A at 100V, it offers a wide safe operating area (SOA) and optimized performance for switching frequencies below 100kHz. The TO-220 package provides industry-standard surface-mount power packaging. Key features include increased ruggedness, high current capability, and broad availability from distribution partners. This device is suitable as a drop-in replacement for existing devices, offering improved performance in low-frequency applications. Its planar cell structure ensures reliable operation and meets JEDEC standard qualification requirements. Overall, the IRF1310N is a versatile MOSFET solution for various power electronics applications.

Features

According to the product information, the features of IRF1310N are:

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
High-current rating
Increased ruggedness
Wide availability from distribution partners
Industry standard qualification
High performance in low frequency applications
Drop-in replacement to existing devices
High current capability

Package

The package type of IRF1310N is TO-220.

Pinout

The IRF1310N is a N-channel MOSFET with a TO-220 package. It has 3 pins:

Drain (D): This is the high-side connection for the MOSFET.
Source (S): This is the low-side connection for the MOSFET.
Gate (G): This is the control input for the MOSFET.

The IRF1310N is designed to handle high currents and voltages, making it suitable for a variety of applications such as power supplies, motor drives, and audio amplifiers.

Manufacturer

The manufacturer of the IRF1310N is Infineon. Infineon is a German-based semiconductor manufacturer that offers a wide range of products, including power management ICs, microcontrollers, and discrete semiconductors. The company was spun off from Siemens in 1999 and is now part of the pan-European semiconductor group, Cypress Integrated Systems.

Equivalent

The equivalent products of IRF1310N are:

STP36NF06L
NXP BSS84 (TO-220)
ON Semi N-channel MOSFETs like MTP36N03L or MTP36N04L

Please note that the exact equivalent may depend on specific application and requirements.

Specifications

Pbfree Code	No	Part Life Cycle Code	Transferred
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	420 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	42 A	Drain-source On Resistance-Max	0.036 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	160 W
Pulsed Drain Current-Max (IDM)	140 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN LEAD
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Package/Case	TO-220