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IPP65R280E6 +BOM
Maximum power dissipation of 104W at a case temperature of 25°C
TO-220-3-
Manufacturer:
Infineon Technologies
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Mfr.Part #:
IPP65R280E6
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Datasheet:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
650 V
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Current - Continuous Drain (Id) @ 25°C:
13.8A (Tc)
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EDA/CAD Models:
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IPP65R280E6 Information
Avaq Semiconductor offers the highly versatile and reliable IPP65R280E6 driver, produced by Infineon Technologies. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IPP65R280E6.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Specifications
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V | Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 280mOhm @ 4.4A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 440µA | Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
Power Dissipation (Max) | 104W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | IPP65R |
Package/Case | TO-220-3 |
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