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IPG20N06S415AATMA1 +BOM

MOSFET N-CHANNEL_55/60V

IPG20N06S415AATMA1 General Description

Mosfet Array 60V 20A 50W Surface Mount, Wettable Flank PG-TDSON-8-10

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Key Features

  • Dual N-channel Normal Level - Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • Feasible for automatic optical inspection (AOI)
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays Series Automotive, AEC-Q101, OptiMOS™
Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual)
FET Feature - Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 25V Power - Max 50W
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount, Wettable Flank
Base Product Number IPG20N RHoS yes
PBFree yes HalogenFree yes
Package/Case TDSON-8

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IPG20N06S415AATMA1 Datasheet PDF

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