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See Technical Specifications

IPD65R660CFDBTMA1 +BOM

High-power transistor for robust applications

Manufacturer:

Infineon Technologies
Mfr.Part #:

IPD65R660CFDBTMA1
Datasheet:

IPD65R660CFDBTMA1 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

650 V
Current - Continuous Drain (Id) @ 25°C:

6A (Tc)
EDA/CAD Models:

Request Free CAD Models for IPD65R660CFDBTMA1

IPD65R660CFDBTMA1 Information

Avaq Semiconductor offers the highly versatile and reliable IPD65R660CFDBTMA1 driver, produced by Infineon Technologies. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IPD65R660CFDBTMA1.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V	Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 200µA	Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	615 pF @ 100 V
Power Dissipation (Max)	62.5W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	IPD65R
Package/Case	DPAK-3