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IPD50N06S4-09
IPD50N06S4-09
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IPD50N06S4-09

In Stock: 5,088

TO-252-3 MOSFETs ROHS IPD50N06S4-09

IPD50N06S4-09 Information

Description

Infineon Technologies' IPD50N06S4-09 is a power MOSFET designed for high-power applications in automotive, industrial, and power supply industries. With a drain-source voltage of 60 volts and a continuous drain current of 50 amperes, this MOSFET is capable of handling demanding power requirements. Its low on-resistance of 0.009 ohms helps to minimize power losses and improve efficiency in circuit designs. The TO-252 package, known for its surface-mount design and excellent thermal performance, makes the IPD50N06S4-09 easy to mount on circuit boards using standard soldering techniques
IPD50N06S4-09

Specifications

IDpuls max 200.0 A RthJC max 2.1 K/W
Ptot max 71.0 W Qualification Automotive
VDS max 60.0 V VGS(th) min 2.0 V
RDS (on) max 9.0 mΩ VGS(th) max 4.0 V
QG max 36.0 nC Polarity N
ID max 50.0 A Technology OptiMOS™-T2
Operating Temperature max 175.0 °C Operating Temperature min -55.0 °C
Package/Case TO-252-3

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Quantity

Unit Price

Ext. Price

1000+

$1.739

$1,739.00

500+

$1.760

$880.00

100+

$1.806

$180.60

30+

$1.909

$57.27

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$2.002

$20.02

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$2.172

$2.17

*The prices above are for reference only.

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