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IPD25N06S4L-30
IPD25N06S4L-30
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IPD25N06S4L-30

In Stock: 6,100

25A High Current N-Channel Transistor for Automotive Applications

IPD25N06S4L-30 Information

Description

The IPD25N06S4L-30 Power MOSFET is a high-performance semiconductor device designed for demanding power electronics applications. With a drain-source voltage rating of 60V and a continuous drain current of 25A, this MOSFET is capable of handling high power levels while maintaining efficient operation. Its low on-state resistance of 0.025 ohms minimizes power dissipation, making it an ideal choice for applications where energy efficiency is paramount
IPD25N06S4L-30

Features

  • Fast recovery time
  • Low on-resistance characteristic
  • Precise gate control
  • High-speed operation ensured

Applications

  • Advanced battery technology
  • Smart grid applications
  • Efficient energy management

Specifications

IDpuls max 92.0 A RthJC max 5.1 K/W
Ptot max 29.0 W Qualification Automotive
VDS max 60.0 V RDS (on) max 30.0 mΩ
VGS(th) max 2.0 V QG max 12.5 nC
Polarity N ID max 25.0 A
Technology OptiMOS™-T2 VGS(th) min 1.2 V
Operating Temperature max 175.0 °C Operating Temperature min -55.0 °C
Package/Case TO-252-3

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Quantity

Unit Price

Ext. Price

1+

$0.472

$0.47

10+

$0.384

$3.84

30+

$0.347

$10.41

100+

$0.299

$29.90

500+

$0.279

$139.50

1000+

$0.267

$267.00

*The prices above are for reference only.

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