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IPD053N08N3G +BOM

Infineon IPD053N08N3G N-channel MOSFET Transistor, 90 A, 80 V, 3-Pin TO-252

IPD053N08N3G General Description

Power Field-Effect Transistor, 90A I(D), 80V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

Key Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free according to IEC61249-2-21

Specifications

Source Content uid IPD053N08N3G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 4
Reach Compliance Code not_compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 190 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 90 A Drain-source On Resistance-Max 0.0053 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 360 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON
Package/Case TO-252-3

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