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IPBE65R230CFD7AATMA1 +BOM

Reliable N-Channel Power MOSFET for demanding application

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IPBE65R230CFD7AATMA1
Datasheet:

IPBE65R230CFD7AATMA1 Datasheet (PDF)
Series:

Automotive, AEC-Q101, CoolMOS™ CFD7A
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

650 V
EDA/CAD Models:

Request Free CAD Models for IPBE65R230CFD7AATMA1

IPBE65R230CFD7AATMA1 Information

General Description

N-Channel 650 V 11A (Tc) 63W (Tc) Surface Mount PG-TO263-7-3-10

Infineon Technologies Corporation Inventory

Key Features

AEC-Q101 qualified
Battery voltages up to 475V without compromising on reliability standards
Efficiency improvements in hard- and soft-switching topologies up to 98.4%
Kelvin-source concept for further efficiency improvement
Intrinsic fast body diode with 30% lower Q
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Highest reliability in the field meeting automotive lifetime requirements
Enabling of higher power density designs
Scalable as designed for use in PFC and DC-DC stage
Granular portfolio available

Infineon Technologies Corporation Original Stock

Application

On-board chargers
Hard-switching topologies (with SiC diode)
PFC boost-stages
DC-DC stage of on-board chargers
HV-LV DC-DC converters
LLC or full-bridge phase shift (ZVS)
Auxiliary power supplies

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101, CoolMOS™ CFD7A
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V	Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	230mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 260µA	Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1044 pF @ 400 V
FET Feature	-	Power Dissipation (Max)	63W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPBE65	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V	Id - Continuous Drain Current	11 A
Rds On - Drain-Source Resistance	439 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	4 V	Qg - Gate Charge	23 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	63 W	Channel Mode	Enhancement
Qualification	AEC-Q101	Tradename	CoolMOS
Fall Time	5 ns	Product Type	MOSFET
Rise Time	3 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Typical Turn-Off Delay Time	56 ns
Typical Turn-On Delay Time	13 ns	Part # Aliases	IPBE65R230CFD7A SP005344079
Package/Case	TO-263-7