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IPB073N15N5ATMA1

In Stock: 4,497

Featuring an N-Channel design

Manufacturers:
Infineon Technologies Corporation
Mfr.Part#:
IPB073N15N5ATMA1
Datasheet:
IPB073N15N5ATMA1 Datasheet (PDF)
Package/Case:
TO263
Product Type:
Single FETs, MOSFETs
Lifecycle:
Active
EDA/CAD Models:
Request Free CAD Models for IPB073N15N5ATMA1

IPB073N15N5ATMA1 Information

Description

Here's a concise introduction to the IPB073N15N5ATMA1: The IPB073N15N5ATMA1 is a high-performance N-channel power MOSFET from Infineon Technologies, designed for demanding applications. With a voltage rating of 650V and continuous drain current up to 73A, this device excels in handling high-power demands. Its low on-state resistance of 5mΩ ensures efficient energy conversion and reduced heat generation. The IPB073N15N5ATMA1 is suitable for various applications, including electric vehicles, power supplies, motor control, industrial processes, and renewable energy systems. Its operating temperature range of -55°C to 150°C makes it a reliable choice for harsh environments. This MOSFET's TO-263 package type provides compactness and ease of integration into complex systems. Overall, the IPB073N15N5ATMA1 is an excellent solution for high-power applications requiring low voltage drop, high efficiency, and robust performance.

Features

According to the product information, the features of IPB073N15N5ATMA1 are:

N-channel power MOSFET
Part number IPB073N15N5ATMA1
650V voltage rating
73A continuous drain current
5mΩ on-state resistance
Temperature range -55°C to 150°C
TO-263 package type
Suitable for high power applications

Package

According to the product information, the package type of IPB073N15N5ATMA1 is D2PAK-3.

Manufacturer

The manufacturer of the IPB073N15N5ATMA1 is Infineon Technologies, a German-based semiconductor company that specializes in power management and automotive electronics.

Applications

According to the product information, IPB073N15N5ATMA1 has application areas in:

Electric vehicles
Power supplies
Motor control
Industrial applications
Renewable energy systems

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	114A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	7.3mOhm @ 57A, 10V	Vgs(th) (Max) @ Id	4.6V @ 160µA
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4700 pF @ 75 V	FET Feature	-
Power Dissipation (Max)	214W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Base Product Number	IPB073
RHoS	yes	PBFree	yes
HalogenFree	yes	Package/Case	TO263

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Returns and exchanges are supported, provided the items remain in their original condition.

Ratings and Reviews

g

g**a
11/02/2023

16

Guy and Igal delivered as promised...Nicely packaged and beautiful parts!!! My customer was able to meet production on time. Very professional and persistent with the order from start to end. IC market needs more of you two. Many thanks!!!
D

D**n
07/30/2023

18

Waited only 16 days.
N

N**h
05/03/2022

8

eight days to nizhny novgorod, the package was thrown into the mailbox.The most interesting thing is that the order moved to the status "received" without my confirmation.There are no pre-assembly schemes inside the package, in the description-too. I'll collect, i'll torture-i'll add a tip.

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IPB073N15N5ATMA1 Datasheet PDF

Preliminary Specification IPB073N15N5ATMA1 PDF

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IPB073N15N5ATMA1 PDF Preview

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Tel: +852 95804164

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