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IPB027N10N3G +BOM

OptiMOS 3 N-channel MOSFET capable of handling up to 100 volts and 120 amps in a D2PAK-2 package

Manufacturer:

INFINEON
Mfr.Part #:

IPB027N10N3G
Other Name:

IPB027N10N3GATMA1
Datasheet:

IPB027N10N3G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for IPB027N10N3G

IPB027N10N3G Information

Description

The IPB027N10N3G is a MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 from Infineon Technologies. It's an excellent choice for high-power applications due to its exceptional switching performance, low RDS(on), and minimal gate charge. This device offers increased efficiency, higher power density, and reduced paralleling requirements. The IPB027N10N3G is designed for use in a wide range of applications, including industrial power supplies, motor drives, and renewable energy systems. Its compact D2PAK-2 package makes it ideal for space-constrained designs, while its RoHS compliance ensures environmental sustainability. Overall, the IPB027N10N3G is an innovative MOSFET that can help designers create more efficient, reliable, and cost-effective power electronic systems.

Features

Based on the product information, the features of IPB027N10N3G are:

Excellent switching performance
World's lowest RDS(on)
Very low Qg and Qgd
Excellent gate charge x RDS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products

Package

The IPB027N10N3G MOSFET has a package type of TO-263-3, D2PAK (2 Leads + Tab), or TO-263AB.

Pinout

The IPB027N10N3G is a MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 from Infineon Technologies.

Pin count: 3 pins (Source, Drain, Gate)

Function:

Source pin (S): Connects to the source of the MOSFET.
Drain pin (D): Connects to the drain of the MOSFET.
Gate pin (G): Connects to the gate of the MOSFET and controls its operation.

This device is a power MOSFET designed for high-frequency switching applications, offering excellent switching performance, low RDS(on), and low gate charge.

Manufacturer

The manufacturer of the IPB027N10N3G is Infineon Technologies.

Applications

IPB027N10N3G is a MOSFET with excellent switching performance, making it suitable for various power electronic applications that require high current and low voltage drops. Possible application areas include:

DC-DC converters
Motor drives
Power supplies
Automotive systems (e.g., battery charging, motor control)
Industrial automation systems (e.g., solar inverters, motor control)

Equivalent

A great question!

According to Infineon's product catalog, IPB027N10N3G is part of the OptiMOS 3 family. Its equivalent products are:

IPW027N10C3
IPS027N10F3
IPL027N10H3

These MOSFETs share similar characteristics and specifications with IPB027N10N3G, offering excellent switching performance, low RDS(on), and high power density.

Specifications

Source Content uid	IPB027N10N3G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	1000 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	120 A	Drain-source On Resistance-Max	0.0027 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	300 W
Pulsed Drain Current-Max (IDM)	480 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 100A, 10V	Vgs(th) (Max) @ Id	3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14800 pF @ 50 V	Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPB027	Package/Case	TO-263-3