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INA818IDR +BOM

Low power (350-µA), precision instrumentation amp with ±60-V overvoltage protection (gain pins 1, 8)

INA818IDR General Description

One of the key features of the INA818IDR is its high precision, thanks to super-beta input transistors that minimize input offset voltage and drift. This results in exceptional accuracy in measuring input signals, while also keeping input bias current and noise at low levels. Furthermore, the device has built-in protection against overvoltage up to ±60 V, safeguarding it from potential damage

Key Features

  • Low offset voltage: 10 µV (typ), 35 µV (max)
  • Gain drift: 5 ppm/°C (G = 1),
    35 ppm/°C (G > 1) (max)
  • Noise: 8 nV/√Hz
  • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
  • Stable with 1-nF capacitive loads
  • Inputs protected up to ±60 V
  • Common-mode rejection: 110 dB, G = 10 (min)
  • Power-supply rejection: 100 dB, G = 1 (min)
  • Supply current: 385 µA (max)
  • Supply voltage range:
    • Single supply: 4.5 V to 36 V
    • Dual supply: ±2.25 V to ±18 V
  • Specified temperature: –40°C to +125°C
  • Package: 8-pin SOIC

Specifications

Source Content uid INA818IDR Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.33.00.01
Date Of Intro 2019-04-20 Amplifier Type INSTRUMENTATION AMPLIFIER
JESD-30 Code R-PDSO-G8 Moisture Sensitivity Level 2
Number of Functions 1 Number of Terminals 8
Peak Reflow Temperature (Cel) 260 Surface Mount YES
Temperature Grade AUTOMOTIVE Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Voltage Gain-Max 10000
Voltage Gain-Min 1

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