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IKW50N60H3 +BOM

IGBT Trench Field Stop 600 V 100 A 333 W Through Hole PG-TO247-3-1

IKW50N60H3 Information

Description

The IKW50N60H3 is a high-performance N-channel IGBT (Insulated Gate Bipolar Transistor) chip from Infineon, designed for high-efficiency applications. It features low switching losses, excellent saturation behavior, and fast switching with low EMI emissions. This device has a maximum voltage rating of 600V and a current rating of 100A, making it suitable for demanding power conversion applications. The IKW50N60H3 is packaged in a TO-247-3 package with three pins and tabs, offering flexibility in design and layout. Its features include optimized diode behavior, low gate resistor selection, short-circuit capability, and high temperature operation up to 175°C. This device also offers excellent EMI behavior and can be used with small gate resistors for reduced delay time and voltage overshoot. Overall, the IKW50N60H3 is a high-performance IGBT chip designed for demanding power conversion applications that require low switching losses, fast switching, and excellent EMI behavior.

Features

The features of the IKW50N60H3 from Infineon are:

  • Low switching losses for high efficiency
  • Excellent VCESAT behavior thanks to TRENCHSTOP technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, leading to improved switching losses
  • Low gate resistor selection possible (down to 5Ω) while maintaining excellent switching behavior
  • Short circuit capability of 5μs
  • High temperature operation up to 175°C (TJMAX)
  • Packaged with and without freewheeling diode for increased design freedom
  • Low switching and conduction losses
  • Excellent EMI behavior
  • Can be used with small gate resistor for reduced delay time and voltage overshoot
  • High current density
  • Best-in-class 600 V IGBT efficiency and EMI performance

Package

The package type of IKW50N60H3 is TO-247-3.

Pinout

According to the product information, the package type of IKW50N60H3 is TO-247-3, which means it has 3 pins. The product description does not specify the functions of each pin, but based on common IGBT component configurations, we can infer that:

  • Pin 1: Gate (base) connection
  • Pin 2: Collector/emitter (positive leg)
  • Pin 3: Emitter (negative leg)

Please note that without official documentation from Infineon, the exact function of each pin may require additional research.

Manufacturer

The manufacturer of the IKW50N60H3 is Infineon.

Applications

The IKW50N60H3 is suitable for high-power applications such as:

  • Industrial drives
  • Power supplies
  • Motor control
  • Renewable energy systems (e.g., solar, wind)
  • Automotive systems (e.g., electric vehicles)

Its low switching losses and excellent EMI behavior make it an ideal choice for demanding applications that require high efficiency and reliability.

ikw50n60h3

Specifications

feature-technology feature-channel-type N
feature-configuration Single feature-maximum-gate-emitter-voltage-v ±20
feature-maximum-collector-emitter-voltage-v 600 feature-maximum-continuous-collector-current-a 100
feature-maximum-power-dissipation-mw 333 feature-packaging Tube
feature-rad-hard feature-pin-count 3
feature-cecc-qualified No feature-esd-protection
feature-military No feature-aec-qualified No
feature-aec-qualified-number feature-auto-motive No
feature-p-pap No feature-eccn-code EAR99
feature-svhc No feature-svhc-exceeds-threshold No
Package/Case TO-247-3

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Ratings and Reviews

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E
E**n 09/29/2024

Very small, the size of a match.

5

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IKW50N60H3 Datasheet PDF

Preliminary Specification IKW50N60H3 PDF Download

IKW50N60H3 PDF Preview