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See Technical Specifications

IHW50N65R5 +BOM

TO-247 Tube Trans IGBT Chip N-CH 650V 80A 282W Automotive

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IHW50N65R5
Datasheet:

IHW50N65R5 Datasheet (PDF)
Series:

TrenchStop®
Voltage - Collector Emitter Breakdown (Max):

650 V
Current - Collector (Ic) (Max):

80 A
Current - Collector Pulsed (Icm):

150 A
EDA/CAD Models:

Request Free CAD Models for IHW50N65R5

Description

The Infineon IHW50N65R5 is a 650V, 50A Trench Stop IGBT transistor with a monolithic body diode. It features high-speed switching capabilities, low gate charge, and enhanced avalanche energy capability. The device is designed for use in power supply applications such as switched-mode power supplies, solar inverters, motor drives, induction heating equipment, welding equipment, EV charging stations, and lighting applications. The IHW50N65R5 has a breakdown voltage of 650V, continuous drain current of 50A, and an RDS(on) of 0.065 ohm. It is packaged in a TO-247-3 package and offers high reliability and low power consumption. The device is suitable for use in applications that require high-power switching and low losses.

Features

According to the product information, the features of IHW50N65R5 are:

650V breakdown voltage
Continuous drain current of 50A
RDS(on) of 0.065 ohm
High-speed switching capabilities
Low gate charge
Enhanced avalanche energy capability
TO-247 package
Designed for use in power supply applications

These features make it suitable for various applications such as switched-mode power supplies, solar inverters, motor drives, induction heating equipment, welding equipment, EV charging stations, and lighting applications.

Package

The package type of IHW50N65R5 is TO-247-3.

Pinout

The IHW50N65R5 is a 3-pin IGBT transistor with the following pinout:

Pin 1: Gate (G)
Pin 2: Collector (C)
Pin 3: Emitter (E) and Drain (D)

This device has a monolithic body diode, which allows it to operate as a reverse-conducting IGBT. The gate-emitter voltage is typically in the range of -5V to +15V, while the collector-emitter voltage can reach up to 650V.

Manufacturer

The manufacturer of the IHW50N65R5 is Infineon.

Applications

The IHW50N65R5 IGBT transistor, manufactured by Infineon, is designed for use in the following application areas: • Switched-mode power supplies • Solar inverters • Motor drives • Induction heating equipment • Welding equipment • EV charging stations • Lighting applications

Equivalent

Based on Infineon's product family structure, similar products to IHW50N65R5 can be found in the following part numbers:

IHS40N60R5
IHS20N65R6
IHV50N65R4
IGW40N60R5

These products share similar characteristics with IHW50N65R5, such as breakdown voltage, continuous drain current, and package type. However, slight variations in specifications may occur depending on the specific application or region.

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	TrenchStop®
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	80 A	Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 50A	Power - Max	282 W
Switching Energy	740µJ (on), 180µJ (off)	Input Type	Standard
Gate Charge	230 nC	Td (on/off) @ 25°C	26ns/220ns
Test Condition	400V, 25A, 8Ohm, 15V	Reverse Recovery Time (trr)	95 ns
Operating Temperature	-40°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IHW50N65	Pin Count	3
Released Date	Feb 16, 2021	Last Modified Date	Mar 7, 2023 4:10 PM UTC
Package/Case	TO-247-3