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IGW50N65F5 +BOM

IGW50N65F5: IGBT Transistors for Engineering Testing

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IGW50N65F5
Datasheet:

IGW50N65F5 Datasheet (PDF)
IC Max:

80.0 A
ICpuls Max:

150.0 A
VCE Max:

650.0 V
Ptot Max:

305.0 W
EDA/CAD Models:

Request Free CAD Models for IGW50N65F5

IGW50N65F5 Information

General Description

The IGW50N65F5 Power IGBT module is a top-tier solution for high power applications, featuring a current rating of 50A and a voltage rating of 650V. Its field-stop IGBT technology offers lower switching losses and higher efficiency compared to traditional IGBTs, resulting in improved performance and thermal management in high power applications. The module's compact and rugged package is designed for easy integration into power electronics systems, providing high reliability and robustness for long-term operation in harsh environments. Key features such as low conduction and switching losses, low VCE(sat) voltage, and high short-circuit withstand capability contribute to the overall efficiency and performance of power systems utilizing the IGW50N65F5 IGBT module. With its versatility and reliability, the IGW50N65F5 is an ideal choice for a wide range of industrial and commercial applications requiring high power capabilities

Infineon Technologies Corporation Inventory

Key Features

650V breakthrough voltage
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q
g
Factor 2 reduction in switching losses
200mV reduction in V
CE(sat)
Low C
OES
OSS
Mild positive temperature coefficient V
CE(sat)
Temperature stability of V
f
Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50V increase in the bus voltage possible without compromising reliability
Higher power density design

Infineon Technologies Corporation Original Stock

Specifications

IC max	80.0 A	ICpuls max	150.0 A
VCE max	650.0 V	Ptot max	305.0 W
Switching Frequency	TRENCHSTOP™5 60-120 kHz	Technology	IGBT TRENCHSTOP™ 5
Switching Frequency max	120.0 kHz	Switching Frequency min	60.0 kHz
Voltage - Collector Emitter Breakdown (Max)	650 V	Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	150 A	Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Power - Max	305 W	Switching Energy	490µJ (on), 160µJ (off)
Input Type	Standard	Gate Charge	120 nC
Td (on/off) @ 25°C	21ns/175ns	Test Condition	400V, 25A, 12Ohm, 15V
Operating Temperature	-40°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IGW50N65	Package/Case	TO-247-3