This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

HUF75925D3ST +BOM

High-speed N-channel MOSFET with 200V voltage rating and 11A current capability for demanding applications

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

HUF75925D3ST
Datasheet:

HUF75925D3ST Datasheet (PDF)
Packaging:

Bulk
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

200 V
EDA/CAD Models:

Request Free CAD Models for HUF75925D3ST

HUF75925D3ST Information

Avaq Semiconductor offers the highly versatile and reliable HUF75925D3ST driver, produced by Fairchild Semiconductor. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the HUF75925D3ST.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Packaging	Bulk	Part Status	Obsolete
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	275mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	78 nC @ 20 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1030 pF @ 25 V
Power Dissipation (Max)	100W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Package/Case	TO-252-3