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High-frequency Schottky diodes and rectifiers featuring a 15V breakdown voltage and a 1pF capacitance
HSMS-2825-TR1G
Obsolete
The HSMS-2825-TR1G is a Schottky Diode product from Avago Technologies. It's designed as a Radio-Frequency (RF) device, offering two independent channels with a voltage rating of 15V and current handling up to 1 A. The diodes are packaged in a TO-253-4 or TO-253AA format, which provides a compact footprint for efficient circuit design. This Schottky Diode is suitable for various RF applications, including harmonic limiting, power dividers, and impedance matching networks. Its characteristics make it an excellent choice for wireless communications infrastructure, such as base stations, amplifiers, and other RF systems that require high-reliability and high-power handling.
Based on the product information, here are the features of HSMS-2825-TR1G:
According to the product information, the package types for HSMS-2825-TR1G are TO-253-4 and TO-253AA.
The manufacturer of the HSMS-2825-TR1G is Avago Technologies. Avago Technologies is a leading semiconductor company that specializes in the design, development, and manufacturing of analog ICs, mixed signal ICs, and optical devices. The company was acquired by Broadcom in 2016, so now it's part of Broadcom Inc.
Based on Avago Technologies' product information, I found that HSMS-2825-TR1G is a Schottky diode with two independent channels. Equivalent products to HSMS-2825-TR1G are likely other high-power Schottky diodes from Avago or similar manufacturers like ON Semiconductor (NXP) or STMicroelectronics. Some possible alternatives could be NXP's BCR16, ON Semi's NSVH2T15L, or STMicro's STSH2T15L. However, please note that exact equivalent products may vary depending on specific application requirements and performance characteristics.
Part Life Cycle Code | Obsolete | Reach Compliance Code | compliant |
---|---|---|---|
ECCN Code | EAR99 | HTS Code | 8541.10.00.60 |
Case Connection | CATHODE | Configuration | SEPARATE, 2 ELEMENTS |
Diode Capacitance-Max | 0.2 pF | Diode Element Material | SILICON |
Diode Type | MIXER DIODE | Forward Voltage-Max (VF) | 0.34 V |
Frequency Band | C BAND | JESD-30 Code | R-PDSO-G4 |
JESD-609 Code | e4 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 4 |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -65 °C |
Peak Reflow Temperature (Cel) | 260 | Power Dissipation-Max | 0.25 W |
Qualification Status | Not Qualified | Reverse Current-Max | 0.1 µA |
Reverse Test Voltage | 1 V | Surface Mount | YES |
Technology | SCHOTTKY | Terminal Finish | NICKEL PALLADIUM GOLD |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 20 | Package/Case | SOT-143-4 |
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