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HGTG40N60B3 +BOM

TO-247 Insulated Gate Bipolar Transistor, N-Channel, 70A I(C), 600V V(BR)CES

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

HGTG40N60B3
Datasheet:

HGTG40N60B3 Datasheet (PDF)
Case Outline:

340CK
MSL Temp (°C):

0
Container Type:

TUBE
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for HGTG40N60B3

HGTG40N60B3 Information

Description

The onsemi HGTG40N60B3 is a high-power N-channel IGBT (Insulated Gate Bipolar Transistor) chip, designed for demanding power applications. With a voltage rating of 600V and current handling up to 70A, it's suitable for use in power supplies, motor control, switching regulators, inverters, induction heating, UPS systems, renewable energy, and welding equipment. This device features a low conduction loss, short circuit rating, and high-speed switching capabilities. Its TO-247-3 package provides reliable thermal performance and easy mounting options. The HGTG40N60B3 is an excellent choice for applications requiring high power density, efficiency, and reliability.

Features

According to the product information, the features of HGTG40N60B3 include:

70A current rating
600V voltage rating with a junction temperature (Tj) up to 150°C
Ultra-low conduction loss
Short circuit rating
600V switching SOA capability
Typical fall time is 100ns at Tj = 150°C

These features make it suitable for applications such as power supplies, motor control, switching regulators, inverters, induction heating, UPS systems, and renewable energy.

Package

The package type of HGTG40N60B3 is TO-247-3.

Pinout

According to the product information, the HGTG40N60B3 has a pin count of 3+Tab, which means it has three pins (pin count: 3) plus three tabs.

The function of each pin is not explicitly listed in the description, but based on its category as an N-CH IGBT Chip, we can infer that:

Pin 1 likely represents the base pin for controlling the device.
Pin 2 and Pin 3 most probably represent the collector-emitter pins, allowing for switching and energy conversion.

The three tabs (not pins) are likely there for heat dissipation purposes, as is common in many power semiconductor components.

Manufacturer

The manufacturer of the HGTG40N60B3 is ON Semiconductor, a leading global semiconductor company that designs, manufactures, and supplies power management, analog, sensors, logic, timing, interface, and mixed-signal semiconductors.

Applications

According to the product information, the application areas of HGTG40N60B3 are:

Power supplies
Motor control
Switching regulators
Inverters
Induction heating
UPS systems
Renewable energy
Welding equipment

Equivalent

A great question!

The equivalent products of HGTG40N60B3 are:

STP75NF70R, STMicroelectronics
FGH40N60S, Fairchild Semiconductor (now ON Semiconductor)
TIP50C, Infineon Technologies
SGA10N60SH4L, Toshiba

Please note that equivalent products may have slight variations in specifications or characteristics.

Specifications

Status	Last Shipments	Case Outline	340CK
MSL Temp (°C)	0	Container Type	TUBE
Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	1.4 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	70 A
Pd - Power Dissipation	290 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	HGTG40N60B3
Continuous Collector Current	70 A	Continuous Collector Current Ic Max	70 A
Gate-Emitter Leakage Current	+/- 100 nA	Height	20.82 mm
Length	15.87 mm	Product Type	IGBT Transistors
Factory Pack Quantity	450	Subcategory	IGBTs
Width	4.82 mm	Part # Aliases	HGTG40N60B3_NL
Unit Weight	0.225401 oz	Package/Case	TO-247-3