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GA20JT12-263 General Description

1200 V 45A (Tc) 282W (Tc) Surface Mount TO-263-7


Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr GeneSiC Semiconductor
Series - Package Tube
Product Status Active FET Type -
Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 60mOhm @ 20A Vgs(th) (Max) @ Id -
Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 3091 pF @ 800 V
FET Feature - Power Dissipation (Max) 282W (Tc)
Operating Temperature 175°C (TJ) Mounting Type Surface Mount
Supplier Device Package TO-263-7 Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number GA20JT12 Manufacturer: GeneSiC Semiconductor
Product Category: JFET RoHS: Details
Technology: SiC Mounting Style: SMD/SMT
Package / Case: TO-263-7 Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV Id - Continuous Drain Current: 45 A
Rds On - Drain-Source Resistance: 50 mO Pd - Power Dissipation: 282 W
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C
Series: SiC Junction Transistor Packaging: MouseReel
Brand: GeneSiC Semiconductor Product Type: JFETs
Factory Pack Quantity: 50 Subcategory: Transistors
Unit Weight: 0.051147 oz

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Availability: 4302 PCS

Qty. Unit Price(USD) Ext. Price
1+ $30.132 $30.13
200+ $11.662 $2,332.40
500+ $11.252 $5,626.00
1000+ $11.050 $11,050.00

The prices below are for reference only.