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See Technical Specifications

FS950R08A6P2B +BOM

IGBT Modules HYBRID PACK DRIVE

Manufacturer:

INFINEON
Mfr.Part #:

FS950R08A6P2B
Datasheet:

FS950R08A6P2B Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Case Connection:

ISOLATED

Description

The FS950R08A6P2B is an Insulated Gate Bipolar Transistor (IGBT) designed by Infineon Technologies. This IGBT features a blocking voltage of 750V, making it suitable for high-power applications. Its unique design provides low switching losses, low Qg and Cres, and inductive design for improved performance. The device also includes an integrated NTC temperature sensor for thermal monitoring and has a compact footprint with direct cooled base plate and performance ceramic. The FS950R08A6P2B is designed to operate in temperatures up to 175°C for short periods, and its mechanical guiding elements ensure proper placement on printed circuit boards (PCBs). The device features PressFIT contact technology, allowing for efficient assembly. Additionally, it complies with RoHS environmental regulations, ensuring a sustainable product solution. Overall, the FS950R08A6P2B IGBT is an optimal choice for high-power applications where thermal management and reliability are critical.

Features

According to the product information, the features of FS950R08A6P2B are:

Blocking voltage 750V
Low VCESAT
Low switching losses
Low Qg and Cres
Inductive design
TVsJ op = 150°C
Short-time extended operation temperature: TVsJ op = 175°C
Compact design
Direct cooled base plate and performance ceramic
Integrated NTC temperature sensor
PressFIT contact technology
RoHS compliant
Mechanical guiding elements

Manufacturer

The manufacturer of the FS950R08A6P2B is Infineon Technologies, a German-based semiconductor manufacturer that specializes in power semiconductors, microcontrollers, and security solutions.

Equivalent

Based on Infineon's product information, the equivalent products to FS950R08A6P2B are:

FS950R06A6P2B
FS950R10A6P2B
FS950R12A6P2B

These products share similar characteristics and specifications with FS950R08A6P2B, including blocking voltage, low VCESAT, and compact design.

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Case Connection	ISOLATED
Collector Current-Max (IC)	950 A	Collector-Emitter Voltage-Max	750 V
Configuration	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	Gate-Emitter Thr Voltage-Max	6.5 V
Gate-Emitter Voltage-Max	20 V	JESD-30 Code	R-XUFM-X33
Number of Elements	6	Number of Terminals	33
Operating Temperature-Max	150 °C	Operating Temperature-Min	-40 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	870 W	Surface Mount	NO
Terminal Form	UNSPECIFIED	Terminal Position	UPPER
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	POWER CONTROL
Transistor Element Material	SILICON	Turn-off Time-Nom (toff)	1110 ns
Turn-on Time-Nom (ton)	380 ns	VCEsat-Max	1.35 V
Package/Case