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FQPF6N80CT +BOM

High-voltage N-channel transistor with low output impedance

Manufacturer:

onsemi
Mfr.Part #:

FQPF6N80CT
Datasheet:

FQPF6N80CT Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

221AT
MSL Type:

NA
MSL Temp (°C):

0
EDA/CAD Models:

Request Free CAD Models for FQPF6N80CT

FQPF6N80CT Information

General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

5.5A, 800V, R_DS(on) = 2.5Ω(Max.) @V_GS = 10 V, I_D = 2.75A
Low gate charge ( Typ. 21nC)
Low C_rss ( Typ. 8pF)
100% avalanche tested

Application

LCD TV
Home Audio System Components
Lighting
Other Industrial

Specifications

Status	Last Shipments	Compliance	PbAHP
Case Outline	221AT	MSL Type	NA
MSL Temp (°C)	0	Container Type	TUBE
Container Qty.	1000	ON Target	N
Channel Polarity	N-Channel	Configuration	Single
V(BR)DSS Min (V)	800	VGS Max (V)	±30
VGS(th) Max (V)	5	ID Max (A)	5.5
PD Max (W)	51	RDS(on) Max @ VGS = 10 V (mΩ)	2500
Qg Typ @ VGS = 10 V (nC)	21	Ciss Typ (pF)	1010
Pricing ($/Unit)	Price N/A	Package/Case	TO-220-3