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FQPF65N06

In Stock: 9,282

40 amperes, 60 volts, with a resistance of 0.016 ohms, this N-channel silicon power MOSFET is designated as FQPF65N06

FQPF65N06 Information

Description

Here is a concise introduction to the FQPF65N06: The FQPF65N06 is an N-Channel Power MOSFET from ON Semiconductor, designed for high-frequency applications that require high currents up to 40A and high voltages up to 60V. This device features a low RDS(on) of 0.016 ohms and a fast response time of around 50ns, making it suitable for power electronic applications such as pulse width modulation (PWM). The FQPF65N06 also has robust characteristics against negative gate current and electromagnetic interference, ensuring reliable operation in industrial control systems, motor drives, and other high-power applications.

Features

According to the product information, the features of ON Semiconductor's FQPF65N06 are:

  • Fast response time (Typ. 50ns)
  • High current density (Up to 200A/cm²)
  • High avalanche energy absorption (Typ. 15mJ) and low thermal resistance (Typ. 0.5°C/W)
  • Suitable for high-frequency applications, high-power applications, and pulse width modulator compatible
  • Robust against negative gate current, electromagnetic interference, and low input capacitance (Typ. 25pF or 30pF)

Overall, this MOSFET is designed to handle high currents while providing robustness against electrical stress and environmental factors.

Package

The package type of FQPF65N06 is TO-220-3 Full Pack.

Pinout

According to the product information, the package type for FQPF65N06 is TO-220-3 Full Pack. The TO-220-3 package has a standard pin count of 3 pins.

The functions of the three pins are:

  • Drain (D): This is the high-side terminal that connects to the load.
  • Source (S): This is the low-side terminal that connects to the power supply or ground.
  • Gate (G): This is the control terminal that receives the gate drive signal from the controller.

These pins allow the FQPF65N06 MOSFET to be used as a power electronic device for controlling high-power loads in industrial applications.

Manufacturer

The manufacturer of the FQPF65N06 is ON Semiconductor, a leading global semiconductor company that provides innovative semiconductor solutions for various industries, including automotive, industrial, medical, and consumer electronics.

Applications

The application areas of the FQPF65N06 MOSFET include "Other Industrial". This suggests that it can be used in various industrial applications beyond specific industries like automotive, consumer appliances, medical devices, etc. Given its high-power and high-frequency capabilities, it could be suitable for applications that require efficient switching and robustness against noise.

Equivalent

According to ON Semi's website, there aren't any direct equivalents of the FQPF65N06 MOFSET. However, similar devices include:

  • NCP4066 (1.2A, 60V)
  • NCS2060B (20A, 30V)
  • NA23210 (6A, 40V)

Please note that these MOSFETs have different specifications and may not be exact replacements for the FQPF65N06.

Specifications

Source Content uid FQPF65N06 Pbfree Code Yes
Part Life Cycle Code End Of Life Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 6 Weeks
Avalanche Energy Rating (Eas) 645 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 40 A Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.016 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 56 W
Pulsed Drain Current-Max (IDM) 160 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON
Package/Case TO-220F-3

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