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40 amperes, 60 volts, with a resistance of 0.016 ohms, this N-channel silicon power MOSFET is designated as FQPF65N06
FQPF65N06
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Here is a concise introduction to the FQPF65N06: The FQPF65N06 is an N-Channel Power MOSFET from ON Semiconductor, designed for high-frequency applications that require high currents up to 40A and high voltages up to 60V. This device features a low RDS(on) of 0.016 ohms and a fast response time of around 50ns, making it suitable for power electronic applications such as pulse width modulation (PWM). The FQPF65N06 also has robust characteristics against negative gate current and electromagnetic interference, ensuring reliable operation in industrial control systems, motor drives, and other high-power applications.
According to the product information, the features of ON Semiconductor's FQPF65N06 are:
Overall, this MOSFET is designed to handle high currents while providing robustness against electrical stress and environmental factors.
The package type of FQPF65N06 is TO-220-3 Full Pack.
According to the product information, the package type for FQPF65N06 is TO-220-3 Full Pack. The TO-220-3 package has a standard pin count of 3 pins.
The functions of the three pins are:
These pins allow the FQPF65N06 MOSFET to be used as a power electronic device for controlling high-power loads in industrial applications.
The manufacturer of the FQPF65N06 is ON Semiconductor, a leading global semiconductor company that provides innovative semiconductor solutions for various industries, including automotive, industrial, medical, and consumer electronics.
The application areas of the FQPF65N06 MOSFET include "Other Industrial". This suggests that it can be used in various industrial applications beyond specific industries like automotive, consumer appliances, medical devices, etc. Given its high-power and high-frequency capabilities, it could be suitable for applications that require efficient switching and robustness against noise.
According to ON Semi's website, there aren't any direct equivalents of the FQPF65N06 MOFSET. However, similar devices include:
Please note that these MOSFETs have different specifications and may not be exact replacements for the FQPF65N06.
Source Content uid | FQPF65N06 | Pbfree Code | Yes |
---|---|---|---|
Part Life Cycle Code | End Of Life | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 6 Weeks |
Avalanche Energy Rating (Eas) | 645 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 40 A | Drain Current-Max (ID) | 40 A |
Drain-source On Resistance-Max | 0.016 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 56 W |
Pulsed Drain Current-Max (IDM) | 160 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Package/Case | TO-220F-3 |
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