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TO-220 MOSFETs ROHS
FQP50N06
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The FQP50N06 from onsemi is a Trans MOSFET N-Channel, specifically designed for high-power applications. With a voltage rating of 60V and current handling up to 50A, it's suitable for various power control and switching tasks. This device boasts impressive features such as low gate charge, low capacitance (Crss), fast switching capabilities, and a high maximum junction temperature rating of 175°C. Additionally, the FQP50N06 has been tested for avalanche operation and has improved dv/dt capability.
According to the product information, the features of FQP50N06 are:
These features make the FQP50N06 a suitable choice for various applications that require high current and voltage handling, as well as fast switching times.
The package type of FQP50N06 is TO-220-3, which is a three-pin tube with a tab for grounding.
According to the product information, the FQP50N06 has a package type of TO-220-3, which means it has 3 pins (plus a tab). The pin count is 3.
As for the function of each pin:
The tab is connected to the source (S) terminal.
The manufacturer of the FQP50N06 is ON Semiconductor (formerly known as Fairchild). It's a leading independent semiconductor company that designs, manufactures, and supplies electronic components to various industries.
The FQP50N06 trans MOSFET is a versatile component with various application areas such as:
Its high current rating and fast switching capabilities make it suitable for applications that require efficient power management.
Based on the specifications, competitors such as STMicroelectronics' STW60NF50F or Infineon's N-channel MOSFET IPS5020D could be considered alternative solutions. Other possibilities include Fairchild (now Onsemi) part numbers like FNF65L06S or FT75R06K. However, please note that equivalent products may vary depending on specific requirements and applications.
Product Category | MOSFET | Technology | Si |
---|---|---|---|
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 50 A | Rds On - Drain-Source Resistance | 22 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 31 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 120 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 65 ns | Forward Transconductance - Min | 22 S |
Height | 16.3 mm | Length | 10.67 mm |
Product Type | MOSFET | Rise Time | 105 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 60 ns | Typical Turn-On Delay Time | 15 ns |
Width | 4.7 mm | Part # Aliases | FQP50N06_NL |
Unit Weight | 0.068784 oz | Package/Case | TO-220-3 |
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Quantity
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Ext. Price
5000+
$0.162
$810.00
2000+
$0.171
$342.00
500+
$0.185
$92.50
150+
$0.218
$32.70
50+
$0.245
$12.25
5+
$0.330
$1.65
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