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With its N-Channel QFET design, the FQP19N20 MOSFET handles voltages up to 200V
FQP19N20
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Here's a concise introduction to the FQP19N20: The FQP19N20 is an N-Channel MOSFET from Onsemi, designed for high-performance applications. It features low gate charge and capacitance, making it suitable for audio signal processing in home theaters, smart TVs, and music systems. With a maximum current rating of 19.4A and voltage rating of 200V, this device is capable of handling demanding power requirements. Its low on-resistance of 150mΩ also results in reduced energy loss and heat generation. The FQP19N20 has been tested for avalanche conditions to ensure reliable operation in harsh environments. Overall, it's a high-quality MOSFET ideal for applications that require efficient energy management and precise control.
According to the product information, the features of FQP19N20 are:
These features are designed to provide a high-performance MOSFET for various applications such as home theaters, smart TVs, and music players.
The package type of FQP19N20 is TO-220-3.
The FQP19N20 is a TO-220-3 package MOSFET, which typically has three pins:
These pins are used to control and switch electronic circuits, making it suitable for applications such as audio amplifiers, motor drives, and power supplies.
The manufacturer of the FQP19N20 is ON Semiconductor (onsemi).
According to the product description, FQP19N20 has multiple application areas in the fields of:
The equivalent products of FQP19N20 are:
Please note that the exact equivalents may vary depending on specific requirements and design constraints.
Product Category | MOSFET | REACH | Details |
---|---|---|---|
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 200 V | Id - Continuous Drain Current | 19.4 A |
Rds On - Drain-Source Resistance | 150 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 40 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 140 W | Channel Mode | Enhancement |
Tradename | QFET | Configuration | Single |
Fall Time | 80 ns | Forward Transconductance - Min | 14.5 S |
Height | 16.3 mm | Length | 10.67 mm |
Product Type | MOSFET | Rise Time | 190 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 55 ns | Typical Turn-On Delay Time | 20 ns |
Width | 4.7 mm | Part # Aliases | FQP19N20_NL |
Unit Weight | 0.068784 oz | Package/Case | TO-220-3 |
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