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See Technical Specifications

FQI10N20CTU +BOM

72W power dissipation and 9.5A current handling make this 200V MOSFET suitable for demanding applications.

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FQI10N20CTU
Datasheet:

FQI10N20CTU Datasheet (PDF)
Packaging:

Tube
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

200 V
EDA/CAD Models:

Request Free CAD Models for FQI10N20CTU

FQI10N20CTU Information

Avaq Semiconductor offers the highly versatile and reliable FQI10N20CTU driver, produced by Fairchild Semiconductor. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the FQI10N20CTU.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Packaging	Tube	Part Status	Obsolete
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	Current - Continuous Drain (Id) @ 25°C	9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	360mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Vgs (Max)	±30V	Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
Power Dissipation (Max)	72W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Package/Case	TO-262-3 Long Leads