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See Technical Specifications

FQE10N20LCTU +BOM

N-Channel 200 V 4A (Tc) 12.8W (Tc) Through Hole TO-126-3

Manufacturer:

onsemi
Mfr.Part #:

FQE10N20LCTU
Datasheet:

FQE10N20LCTU Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

200 V
Current - Continuous Drain (Id) @ 25°C:

4A (Tc)
EDA/CAD Models:

Request Free CAD Models for FQE10N20LCTU

FQE10N20LCTU Information

Avaq Semiconductor offers the highly versatile and reliable FQE10N20LCTU driver, produced by onsemi. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the FQE10N20LCTU.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	Rds On (Max) @ Id, Vgs	360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	19 nC @ 5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 25 V
Power Dissipation (Max)	12.8W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	FQE1
Package/Case	TO-225