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See Technical Specifications

FQB7N10TM +BOM

Compact D2PAK package ideal for space-constrained designs.

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FQB7N10TM
Datasheet:

FQB7N10TM Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

7.3A (Tc)
EDA/CAD Models:

Request Free CAD Models for FQB7N10TM

FQB7N10TM Information

Avaq Semiconductor offers the highly versatile and reliable FQB7N10TM driver, produced by Fairchild Semiconductor. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the FQB7N10TM.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	350mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 10 V
Vgs (Max)	±25V	Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
Power Dissipation (Max)	3.75W (Ta), 40W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Package/Case	TO-263-3