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See Technical Specifications

FQB2P25TM +BOM

High-power P-channel MOSFET for 250V applications

Manufacturer:

onsemi
Mfr.Part #:

FQB2P25TM
Datasheet:

FQB2P25TM Datasheet (PDF)
Drain Source Voltage (Vdss):

250V
Continuous Drain Current (Id):

2.3A
Drain Source On Resistance (RDS(on)@Vgs,Id):

4Ω@1.15A,10V
Power Dissipation (Pd):

3.13W;52W
EDA/CAD Models:

Request Free CAD Models for FQB2P25TM

FQB2P25TM Information

Avaq Semiconductor offers the highly versatile and reliable FQB2P25TM driver, produced by onsemi. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the FQB2P25TM.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Drain Source Voltage (Vdss)	250V	Continuous Drain Current (Id)	2.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)	4Ω@1.15A,10V	Power Dissipation (Pd)	3.13W;52W
Gate Threshold Voltage (Vgs(th)@Id)	5V@250uA	Type	P Channel
Input Capacitance (Ciss@Vds)	250pF@25V	Total Gate Charge (Qg@Vgs)	8.5nC@10V
Operating Temperature	-55℃~+150℃@(Tj)	Package/Case	TO-263-3