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In Stock: 9,989
This Power MOSFET
FQA70N10
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Product Category | MOSFET | REACH | Details |
---|---|---|---|
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 70 A |
Rds On - Drain-Source Resistance | 25 mOhms | Vgs - Gate-Source Voltage | - 25 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 110 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 214 W | Channel Mode | Enhancement |
Tradename | QFET | Configuration | Single |
Fall Time | 160 ns | Forward Transconductance - Min | 48 S |
Height | 20.1 mm | Length | 16.2 mm |
Product Type | MOSFET | Rise Time | 470 ns |
Factory Pack Quantity | 30 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 130 ns | Typical Turn-On Delay Time | 30 ns |
Width | 5 mm | Part # Aliases | FQA70N10_NL |
Unit Weight | 0.162260 oz | Package/Case | TO-3PN-3 |
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