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FQA70N10

In Stock: 9,989

This Power MOSFET

FQA70N10 Information

Description

Featuring a proprietary design that sets it apart from traditional MOSFETs, the FQA70N10 boasts superior efficiency and reliability. Its unique structure enables it to handle high levels of power while maintaining stable performance, making it the ideal choice for a wide range of applications. From powering audio systems to controlling DC motors, this power MOSFET is ready to tackle any task you throw its way

Features

  • 100V, 70A
  • 23mΩ Max @ 10V, 35A
  • Type 85nC Gate Charge
  • 150pF Typical Crss
  • 175°C Junction Temp Rating
  • Avalanche Tested 100%

Applications

  • Powerful amp circuits
  • Efficient motor drives
  • Reliable UPS systems

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 70 A
Rds On - Drain-Source Resistance 25 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 110 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 214 W Channel Mode Enhancement
Tradename QFET Configuration Single
Fall Time 160 ns Forward Transconductance - Min 48 S
Height 20.1 mm Length 16.2 mm
Product Type MOSFET Rise Time 470 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 130 ns Typical Turn-On Delay Time 30 ns
Width 5 mm Part # Aliases FQA70N10_NL
Unit Weight 0.162260 oz Package/Case TO-3PN-3

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