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N-channel 100V 140A power MOSFET in TO-3P(N) package, suitable for high-current applications
TO-3PN-3Manufacturer:
Onsemi
Mfr.Part #:
FQA140N10
Datasheet:
REACH:
Details
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
EDA/CAD Models:
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The FQA140N10 is an N-Channel MOSFET from ON Semiconductor, designed for high-power applications. It features a maximum current rating of 140A, voltage rating of 100V, and a low on-resistance of 10mΩ (max) at VGS = 10V and ID = 70A. This device is suitable for use in AC-DC merchant power supplies, servers, workstations, desktop PCs, switched mode power supplies, audio amplifiers, DC mode control, and variable switching power applications. The FQA140N10 has a low gate charge of 220nC (typ) and a low Crss of 470pF (typ), making it suitable for high-frequency applications. Additionally, the device is 100% avalanche tested and has a maximum junction temperature rating of 175°C.
According to the product information, the features of the FQA140N10 MOSFET are:
These features make it suitable for various applications such as AC-DC merchant power supplies, workstations, servers, desktop PCs, switched mode power supplies, audio amplifiers, DC mode control, and variable switching power applications.
The package type of FQA140N10 is TO-3P.
According to the product information, the package type for FQA140N10 is TO-3P. The TO-3P package has a standard pin count of 3 pins.
The functions of the three pins are:
These pins allow the FQA140N10 MOSFET to be controlled and used in various applications such as power supplies, audio amplifiers, and DC-DC converters.
The manufacturer of the FQA140N10 is ON Semiconductor (onsemi).
According to the product information, the application areas of FQA140N10 are:
Based on the specifications, equivalent products to FQA140N10 could be:
These MOSFETs have similar ratings and characteristics, such as high current handling, low RDS(on), and suitable for power supply applications. However, please note that the exact equivalent product may depend on specific application requirements and manufacturer preferences.
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 140 A |
Rds On - Drain-Source Resistance | 10 mOhms | Vgs - Gate-Source Voltage | - 25 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 285 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 375 W | Channel Mode | Enhancement |
Tradename | QFET | Configuration | Single |
Fall Time | 360 ns | Forward Transconductance - Min | 80 S |
Height | 20.1 mm | Length | 16.2 mm |
Product Type | MOSFET | Rise Time | 940 ns |
Factory Pack Quantity | 450 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 350 ns | Typical Turn-On Delay Time | 75 ns |
Width | 5 mm | Part # Aliases | FQA140N10_NL |
Unit Weight | 0.162260 oz | Package/Case | TO-3PN-3 |
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