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FQA13N80 Image
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FQA13N80

In Stock: 7,418

600V N-channel TO-3P MOSFET

FQA13N80 Information

Description

Here's a concise introduction to the FQA13N80: The FQA13N80 is an N-channel power MOSFET manufactured by Fairchild Semiconductor. It's designed for applications that require high voltage, current, and power handling. With a maximum drain-source voltage of 800V, this device can support load currents up to 12.6A at a switching frequency of 300W. Its low saturation voltage (750mΩ @ 6.3A, 10V) makes it suitable for applications that require high efficiency and minimal power dissipation. The FQA13N80 is packaged in a TO-3P format, which provides thermal resistance and mechanical stability. This MOSFET's operating range includes ambient temperatures up to 125°C, making it suitable for use in various industrial and consumer applications.

Features

Based on the provided product information, the features of FQA13N80 are:

  • 800V voltage rating
  • 12.6A current rating
  • 300W power dissipation
  • 750mΩ(@6.3A,10V) and 5V (@250uA) equivalent drain-source resistance
  • N-channel MOSFET configuration
  • ROHS compliant packaging in a TO-3P package

Package

The package type of FQA13N80 is TO-3P.

Pinout

The FQA13N80 is a N-channel power MOSFET from Fairchild Semiconductor, packaged in TO-3P (3-pin). The pinout is:

  • Drain (D): Pin 1
  • Source (S): Pin 2
  • Gate (G): Pin 3

This device is designed for high-power switching applications and has a maximum voltage rating of 800V, current rating of 12.6A, and power dissipation of 300W.

Manufacturer

The manufacturer of the FQA13N80 is Fairchild Semiconductor. Fairchild Semiconductor is a semiconductor component manufacturing company that specializes in developing and manufacturing power management solutions, including Power MOSFETs like the FQA13N80. The company is well-known for its high-quality and reliable electronic components that are used in various industries such as automotive, industrial, and consumer electronics.

Applications

The FQA13N80 MOSFET is suitable for high-voltage, high-current applications such as DC-DC converters, motor drives, and power supplies. Its high voltage rating (800V) and current handling capability (12.6A) make it an ideal choice for applications that require a high degree of isolation and robustness.

Equivalent

The equivalent products of FQA13N80 are:

  • STP16NF60
  • IRF840
  • N-channel MOSFETs with similar specifications.

Please note that these equivalents may have slight variations in parameters, but they serve the same purpose as FQA13N80.

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 800 V
Id - Continuous Drain Current 12.6 A Rds On - Drain-Source Resistance 750 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 300 W
Channel Mode Enhancement Configuration Single
Fall Time 110 ns Forward Transconductance - Min 13 S
Height 20.1 mm Length 16.2 mm
Product Type MOSFET Rise Time 150 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 155 ns Typical Turn-On Delay Time 60 ns
Width 5 mm Part # Aliases FQA13N80_NL
Unit Weight 0.162260 oz Package/Case TO-3PN-3

FQA13N80 FAQs

1.Q: What are alternative/related parts to FQA13N80_NL?

A: Similar parts include Fairchild/onsemi’s FQA11N90 (900V), FQA19N60 (600V), or Infineon’s IPP60R190P7 (600V/190mΩ).

2.Q: What certifications or standards does the FQA13N80_NL comply with?

A: It is RoHS-compliant and follows industry standards for high-voltage MOSFETs (e.g., AEC-Q101 for automotive may apply if specified).

3.Q: What are the recommended operating conditions for FQA13N80_NL?

A: Operate within: VDS ≤ 800V, ID ≤ 12.6A (continuous), VGS = ±30V max, and junction temperature range of -55°C to +150°C.

4.Q: What is the thermal resistance (RθJA) of the FQA13N80_NL in TO-3P package?

A: The datasheet typically specifies RθJA as ~62.5°C/W (junction-to-ambient) with a heatsink. Exact values depend on PCB layout and cooling conditions.

5.Q: What is the absolute maximum Vgs (Gate-Source Voltage) for FQA13N80_NL?

A: The absolute maximum Vgs is ±30V. Exceeding this may damage the gate oxide layer.

6.Q: What are typical applications for the FQA13N80_NL MOSFET?

A: It is commonly used in high-voltage switching applications like power supplies, motor drives, inverters, and industrial SMPS (Switched-Mode Power Supplies).

7.Q: What are the key features of the FQA13N80_NL N-Channel MOSFET?

A: Key features include 800V Drain-Source voltage, 12.6A continuous current, 750mΩ Rds(on) at 6.3A, 300W power dissipation, and enhancement-mode operation.

8.Q: What is the pinout configuration of the FQA13N80_NL MOSFET in TO-3P package?

A: The TO-3P-3 (SC-65-3) package pinout is: Pin 1 (Gate), Pin 2 (Drain), Pin 3 (Source). The metal tab is electrically connected to the Drain.

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