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600V N-channel TO-3P MOSFET
FQA13N80
Obsolete
Here's a concise introduction to the FQA13N80: The FQA13N80 is an N-channel power MOSFET manufactured by Fairchild Semiconductor. It's designed for applications that require high voltage, current, and power handling. With a maximum drain-source voltage of 800V, this device can support load currents up to 12.6A at a switching frequency of 300W. Its low saturation voltage (750mΩ @ 6.3A, 10V) makes it suitable for applications that require high efficiency and minimal power dissipation. The FQA13N80 is packaged in a TO-3P format, which provides thermal resistance and mechanical stability. This MOSFET's operating range includes ambient temperatures up to 125°C, making it suitable for use in various industrial and consumer applications.
Based on the provided product information, the features of FQA13N80 are:
The package type of FQA13N80 is TO-3P.
The FQA13N80 is a N-channel power MOSFET from Fairchild Semiconductor, packaged in TO-3P (3-pin). The pinout is:
This device is designed for high-power switching applications and has a maximum voltage rating of 800V, current rating of 12.6A, and power dissipation of 300W.
The manufacturer of the FQA13N80 is Fairchild Semiconductor. Fairchild Semiconductor is a semiconductor component manufacturing company that specializes in developing and manufacturing power management solutions, including Power MOSFETs like the FQA13N80. The company is well-known for its high-quality and reliable electronic components that are used in various industries such as automotive, industrial, and consumer electronics.
The FQA13N80 MOSFET is suitable for high-voltage, high-current applications such as DC-DC converters, motor drives, and power supplies. Its high voltage rating (800V) and current handling capability (12.6A) make it an ideal choice for applications that require a high degree of isolation and robustness.
The equivalent products of FQA13N80 are:
Please note that these equivalents may have slight variations in parameters, but they serve the same purpose as FQA13N80.
Product Category | MOSFET | Technology | Si |
---|---|---|---|
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 800 V |
Id - Continuous Drain Current | 12.6 A | Rds On - Drain-Source Resistance | 750 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 300 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 110 ns | Forward Transconductance - Min | 13 S |
Height | 20.1 mm | Length | 16.2 mm |
Product Type | MOSFET | Rise Time | 150 ns |
Factory Pack Quantity | 30 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 155 ns | Typical Turn-On Delay Time | 60 ns |
Width | 5 mm | Part # Aliases | FQA13N80_NL |
Unit Weight | 0.162260 oz | Package/Case | TO-3PN-3 |
1.Q: What are alternative/related parts to FQA13N80_NL?
A: Similar parts include Fairchild/onsemi’s FQA11N90 (900V), FQA19N60 (600V), or Infineon’s IPP60R190P7 (600V/190mΩ).
2.Q: What certifications or standards does the FQA13N80_NL comply with?
A: It is RoHS-compliant and follows industry standards for high-voltage MOSFETs (e.g., AEC-Q101 for automotive may apply if specified).
3.Q: What are the recommended operating conditions for FQA13N80_NL?
A: Operate within: VDS ≤ 800V, ID ≤ 12.6A (continuous), VGS = ±30V max, and junction temperature range of -55°C to +150°C.
4.Q: What is the thermal resistance (RθJA) of the FQA13N80_NL in TO-3P package?
A: The datasheet typically specifies RθJA as ~62.5°C/W (junction-to-ambient) with a heatsink. Exact values depend on PCB layout and cooling conditions.
5.Q: What is the absolute maximum Vgs (Gate-Source Voltage) for FQA13N80_NL?
A: The absolute maximum Vgs is ±30V. Exceeding this may damage the gate oxide layer.
6.Q: What are typical applications for the FQA13N80_NL MOSFET?
A: It is commonly used in high-voltage switching applications like power supplies, motor drives, inverters, and industrial SMPS (Switched-Mode Power Supplies).
7.Q: What are the key features of the FQA13N80_NL N-Channel MOSFET?
A: Key features include 800V Drain-Source voltage, 12.6A continuous current, 750mΩ Rds(on) at 6.3A, 300W power dissipation, and enhancement-mode operation.
8.Q: What is the pinout configuration of the FQA13N80_NL MOSFET in TO-3P package?
A: The TO-3P-3 (SC-65-3) package pinout is: Pin 1 (Gate), Pin 2 (Drain), Pin 3 (Source). The metal tab is electrically connected to the Drain.
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