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FF650R17IE4DPB2BOSA1 +BOM

IGBT Module Trench Field Stop 2 Independent 1700 V 650 A Chassis Mount Module

FF650R17IE4DPB2BOSA1 General Description

IGBT Module Trench Field Stop 2 Independent 1700 V 650 A Chassis Mount Module

Infineon Technologies Corporation Inventory

Key Features

  • Extended operation temperature T
  • vj op
  • High DC stability
  • High current density
  • Low switching losses
  • T
  • vj>
  • Enlarged diode for regenerative operation
  • Low V
  • CEsat
  • Package with CTI > 400
  • High creepage and clearance distances
  • High power and thermal cycling capability
  • Copper base plate
  • UL recognized
  • High power density
  • Standardized housing
Infineon Technologies Corporation Original Stock

Application

  • Motor control and drives
  • Power converterand inverter forwind turbines
  • Power transmission and distribution
  • Traction

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series PrimePACK™2
IGBT Type Trench Field Stop Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1700 V Current - Collector (Ic) (Max) 650 A
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A Current - Collector Cutoff (Max) 5 mA
Input Capacitance (Cies) @ Vce 54 nF @ 25 V Input Standard
NTC Thermistor Yes Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount Base Product Number FF650R17
RHoS yes PBFree yes
HalogenFree no Product Category IGBT Modules
Product Type IGBT Modules Subcategory IGBTs
Part # Aliases FF650R17IE4DP_B2 SP001089910 Package/Case BGA

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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FF650R17IE4DPB2BOSA1 Datasheet PDF

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FF650R17IE4DPB2BOSA1 PDF Preview

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