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FDS6675BZ +BOM
30V 11A 13mΩ@10V,11A 2.5W 3V@250uA P Channel SO-8 MOSFETs ROHS
SOIC-8-
Manufacturer:
Onsemi
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Mfr.Part #:
FDS6675BZ
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
P-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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FDS6675BZ Information
Description
The FDS6675BZ is a P-Channel PowerTrench MOSFET from onsemi, featuring a compact surface-mount package designed for ease of use. It has an RDS(on) of 13mΩ, operating at -30V and handling up to -11A. This device offers high reliability, low noise, and high efficiency, making it suitable for various applications including consumer electronics, appliances, renewable energy systems, solar power, automotive, and industrial sectors. Its rugged design, wide operating temperature range (-40°C to 150°C), and compliance with RoHS regulations ensure long-term durability and reduced environmental impact. With its advanced trench technology and high surge current handling, the FDS6675BZ is an effective solution for efficient usage, reliable performance, and compact design in a variety of applications.
Features
Based on the product information, the features of the FDS6675BZ are:
- Compact surface-mount package for ease of use
- RDS(on) as low as 13mΩ
- High reliability for long-term durability
- Suitable for consumer electronics and appliances, battery applications, renewable energy systems, solar power applications, automotive, and industrial applications
- Low noise and high efficiency for reduced heat generation
- Fast switching speed for high efficiency
- Operating frequency up to 100 kHz
- Rugged and reliable design
- Low inductance for reduced EMI
- Operating temperature range -40°C to 150°C
Additionally, it has several other features listed, including trench technology, extended VGS range, low capacitance, and compliance with RoHS regulations.
Package
The package type of FDS6675BZ is Small Outline Packages (SOP).
Pinout
The FDS6675BZ from onsemi is a P-Channel PowerTrench MOSFET with a small outline package. It has a pin count of 3:
- Drain (D)
- Source (S)
- Gate (G)
This device is designed for power switching applications, offering low RDS(on) and high current handling up to 11A. Its compact package makes it suitable for space-constrained designs in consumer electronics and appliances.
Manufacturer
The manufacturer of the FDS6675BZ is ON Semiconductor (onsemi).
Applications
Based on the product information, the application areas for FDS6675BZ are:
- Consumer electronics and appliances
- Battery applications
- Renewable energy systems and solar power applications
- Automotive and industrial applications
These applications highlight the device's suitability for a wide range of products requiring efficient, reliable, and compact power management solutions.
Equivalent
According to onsemi's datasheet, some equivalent products for FDS6675BZ are:
- NXP PCA9667
- STP16NF50L
- Vishay SiH1110A-E3/45
- Texas Instruments TPH2011-30V
Please note that the exact equivalent may depend on specific application and requirements.
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 11 A | Rds On - Drain-Source Resistance | 10.8 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 62 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Configuration | Single | Fall Time | 60 ns |
Forward Transconductance - Min | 34 S | Height | 1.75 mm |
Length | 4.9 mm | Product Type | MOSFET |
Rise Time | 7.8 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 120 ns |
Typical Turn-On Delay Time | 3 ns | Width | 3.9 mm |
Unit Weight | 0.004586 oz | Package/Case | SOIC-8 |
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In Stock: 4,884
Minimum Order: 1
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