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See Technical Specifications

FDMS4435BZ +BOM

P-Channel PowerTrench® MOSFET -30V, -18A, 20mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMS4435BZ
Datasheet:

FDMS4435BZ Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99

FDMS4435BZ Information

Description

The onsemi FDMS4435BZ is a P-Channel PowerTrench MOSFET designed for high-performance applications in the fields of battery-powered devices, such as cameras, chargers, power banks, laptops, tablets, smartphones, headphones, keyboards, mice, external hard drives, USB flash drives, SD cards, speakers, monitors, and printers. It features a low on-resistance (RDS(on)) of 20 mΩ at VGS = -10V and ID = -9A, making it suitable for high-power and high-current applications. The FDMS4435BZ also offers an extended VGS range of -25V, allowing it to be used in battery-powered devices. Additionally, it features a high ESD protection level of >7kV typical, ensuring reliable operation in harsh environments. The device is RoHS compliant and has a termination that meets lead-free requirements.

Features

The FDMS4435BZ features:

Max rDS(on) = 20 mΩ at VGS = -10V, ID = -9A
Max rDS(on) = 37 mΩ at VGS = -4.5V, ID = -6.5A
Extended VGSS range (-25V) for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
HBM ESD protection level >7kV typical (Note 4)
100% UIL tested
Termination is Lead-free and RoHS Compliant

Package

According to the product information, the package type of FDMS4435BZ is "None", which means it does not have a specific package type mentioned.

Manufacturer

The manufacturer of the FDMS4435BZ is ON Semiconductor (onsemi).

Applications

According to the provided information, the application areas for FDMS4435BZ are:

Camera
Charger
Power bank
Laptop
Tablet
Smartphone
Headphones
Keyboard
Mouse
External hard drive
USB flash drive
SD card
Speakers
Monitor
Printer
Cable
Adapter
Case

These applications are general and do not specifically mention exact devices or products.

Equivalent

Based on the product information, the equivalent products of FDMS4435BZ are:

STP16NF60
NXP BUK4537-50A
Vishay SiH3110DY-E3/54
Infineon IPS640R04L4G

These MOSFETs have similar characteristics and applications as the FDMS4435BZ.

Specifications

Source Content uid	FDMS4435BZ	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Additional Feature	ULTRA-LOW RESISTANCE	Avalanche Energy Rating (Eas)	18 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	9 A
Drain-source On Resistance-Max	0.02 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	MO-240AA	JESD-30 Code	R-PDSO-F5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	39 W	Pulsed Drain Current-Max (IDM)	50 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Package/Case	PowerTDFN-8