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FDMS3572 +BOM

Describing FDMS3572, it's a MOSFET with N-channel configuration, designed for high power applications with its UltraFET PowerTrench technology

FDMS3572 Information

Description

The FDMS3572 is an N-Channel power MOSFET from Onsemi, designed for surface-mount applications. It has a maximum drain-source on-resistance (RDS(on)) of 16.5mΩ at VGS=10V and ID=8.8A, making it suitable for high-frequency switching applications. The device also features low Miller charge and optimized efficiency at high frequencies. This versatile power MOSFET is RoHS compliant and offers a reliable option for various needs. Its compact 8-MLP (5x6) package makes it a practical and convenient choice for many applications, including those requiring high current handling and efficient switching performance.

Features

According to the product information, the features of the FDMS3572 are:

  • Max rDS(on) = 16.5 mΩ at VGS = 10 V, ID = 8.8 A
  • Max rDS(on) = 24 mΩ at VGS = 6 V, ID = 8.4 A
  • Typ Qg = 28 nC at VGS = 10 V
  • Low Miller Charge
  • Optimized efficiency at high frequencies
  • RoHS Compliant

These features make the FDMS3572 a versatile and reliable option for various applications.

Package

According to the product information, the package type of FDMS3572 is 8-MLP (5x6), which is a Surface Mount package.

Manufacturer

According to the product information, the manufacturer of the FDMS3572 is onsemi. Onsemi (formerly Fairchild Semiconductor) is a leading provider of semiconductor components. It provides a wide range of power semiconductor solutions for various applications.

Applications

Based on the provided information, the application areas of FDMS3572 are versatile and reliable options for various needs, making it a practical and convenient choice. It's perfect for all occasions, great for everyday use, and an essential component for any project.

Equivalent

Based on Onsemi's product lineup and market trends, equivalent products to FDMS3572 might include N-channel MOSFETs like NCP4513, NSV3220P4, or NTSD4055. These devices share similar voltage, current, and frequency ratings with FDMS3572. However, please note that a precise match may not be available due to the unique characteristics of each device. It's recommended to consult the datasheets and perform a thorough evaluation before selecting an equivalent product for your application.

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 8.8 A Rds On - Drain-Source Resistance 16.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 28 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename UltraFET
Series FDMS3572 Configuration Single
Fall Time 12 ns Height 0.8 mm
Length 6 mm Product Type MOSFET
Rise Time 13 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 24 ns Typical Turn-On Delay Time 11 ns
Width 5 mm Unit Weight 0.007408 oz
Package/Case PowerWDFN-8

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