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FDMS3572 +BOM
Describing FDMS3572, it's a MOSFET with N-channel configuration, designed for high power applications with its UltraFET PowerTrench technology
PowerWDFN-8-
Manufacturer:
Onsemi
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Mfr.Part #:
FDMS3572
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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FDMS3572 Information
Description
The FDMS3572 is an N-Channel power MOSFET from Onsemi, designed for surface-mount applications. It has a maximum drain-source on-resistance (RDS(on)) of 16.5mΩ at VGS=10V and ID=8.8A, making it suitable for high-frequency switching applications. The device also features low Miller charge and optimized efficiency at high frequencies. This versatile power MOSFET is RoHS compliant and offers a reliable option for various needs. Its compact 8-MLP (5x6) package makes it a practical and convenient choice for many applications, including those requiring high current handling and efficient switching performance.
Features
According to the product information, the features of the FDMS3572 are:
- Max rDS(on) = 16.5 mΩ at VGS = 10 V, ID = 8.8 A
- Max rDS(on) = 24 mΩ at VGS = 6 V, ID = 8.4 A
- Typ Qg = 28 nC at VGS = 10 V
- Low Miller Charge
- Optimized efficiency at high frequencies
- RoHS Compliant
These features make the FDMS3572 a versatile and reliable option for various applications.
Package
According to the product information, the package type of FDMS3572 is 8-MLP (5x6), which is a Surface Mount package.
Manufacturer
According to the product information, the manufacturer of the FDMS3572 is onsemi. Onsemi (formerly Fairchild Semiconductor) is a leading provider of semiconductor components. It provides a wide range of power semiconductor solutions for various applications.
Applications
Based on the provided information, the application areas of FDMS3572 are versatile and reliable options for various needs, making it a practical and convenient choice. It's perfect for all occasions, great for everyday use, and an essential component for any project.
Equivalent
Based on Onsemi's product lineup and market trends, equivalent products to FDMS3572 might include N-channel MOSFETs like NCP4513, NSV3220P4, or NTSD4055. These devices share similar voltage, current, and frequency ratings with FDMS3572. However, please note that a precise match may not be available due to the unique characteristics of each device. It's recommended to consult the datasheets and perform a thorough evaluation before selecting an equivalent product for your application.
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 8.8 A | Rds On - Drain-Source Resistance | 16.5 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 28 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | UltraFET |
Series | FDMS3572 | Configuration | Single |
Fall Time | 12 ns | Height | 0.8 mm |
Length | 6 mm | Product Type | MOSFET |
Rise Time | 13 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 24 ns | Typical Turn-On Delay Time | 11 ns |
Width | 5 mm | Unit Weight | 0.007408 oz |
Package/Case | PowerWDFN-8 |
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In Stock: 7,866
Minimum Order: 1
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