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FDMC6683 +BOM

FDMC6683, a Power Field-Effect Transistor renowned for its robustness and versatility, is indispensable for demanding power management tasks

Key Features

  • Q1: N-Channel
  • Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 4A
  • Max rDS(on) = 100mΩ at VGS = 2.5V, ID = 3A
  • Q2: N-Channel
  • Max rDS(on) = 100mΩ at VGS = 4.5V, ID = 4A
  • Max rDS(on) = 150mΩ at VGS = 2.5V, ID = 2A
  • Low gate Charge
  • RoHS Compliant

Specifications

Source Content uid FDMC6683 Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 37 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 18 A Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.0083 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1095 pF JESD-30 Code S-PDSO-N5
JESD-609 Code e4 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 5
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 41 W
Pulsed Drain Current-Max (IDM) 50 A Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD SILVER Terminal Form NO LEAD
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 757 ns
Turn-on Time-Max (ton) 82 ns Package/Case 8-MLP (3.3x3.3)

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