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FDG6318PZ +BOM

Dual P-Channel Digital FET with -20V and -0.5A ratings, 780 mΩ resistance, packaged in a 3000-REEL

FDG6318PZ Information

General Description

The FDG6318PZ is a cutting-edge dual P-Channel logic level enhancement mode MOSFET meticulously engineered to minimize on-state resistance. Tailored for use in bipolar digital transistors and small signal MOSFETS, this product delivers unparalleled performance and reliability. Its advanced design makes it a superior choice for applications that demand precision and efficiency in electronic components

Key Features

  • Low power consumption < 1uA
  • High speed switching, 200V
  • ESD protected, 5000V HBM
  • Operating temperature -40 to 150°C
  • 2.5V logic compatible
  • Fast turn-off time, 100ns

Application

  • A versatile and reliable choice.

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 500 mA Rds On - Drain-Source Resistance 780 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 1.62 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 300 mW
Channel Mode Enhancement Configuration Dual
Fall Time 13 ns Forward Transconductance - Min 1.1 S
Height 1.1 mm Length 2 mm
Product MOSFET Small Signal Product Type MOSFET
Rise Time 13 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 P-Channel
Type FET Typical Turn-Off Delay Time 40 ns
Typical Turn-On Delay Time 10 ns Width 1.25 mm
Unit Weight 0.000988 oz Package/Case TSSOP-6

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