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See Technical Specifications

FDG6316P +BOM

Packaged in Tape and Reel

Manufacturer:

Onsemi
Mfr.Part #:

FDG6316P
Datasheet:

FDG6316P Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for FDG6316P

FDG6316P Information

Description

The introduction to the FDG6316P:

The FDG6316P is a dual P-channel MOSFET array transistor from onsemi, featuring high-performance trench technology for extremely low RDS(ON) values. This compact SC-70 T/R package device provides a maximum current of 0.7A and withstands voltage up to 12V. With low gate charge, it is suitable for various applications.

Its key specifications include:

Maximum current: 0.7A
Voltage rating: -12V
RDS(ON) values: 270mΩ, 360mΩ, and 650mΩ at different V GS levels

The device's compact package size and high performance make it suitable for many applications, including general usage.

Features

According to the product information, the features of the FDG6316P are:

-0.7 A, -12 V
Low Gate Charge
High-Performance Trench Technology for Extremely low RDS(ON)
Compact industry standard SC70-6 surface mount package
RDS(ON) values:
+ 270 mΩ @ VGS = -4.5 V
+ 360 mΩ @ VGS = -2.5 V
+ 650 mΩ @ VGS = -1.8 V

These features make the FDG6316P a suitable component for various applications, including general usage and many different applications.

Package

The package type of FDG6316P is SC-88-6, which is a surface mount package.

Manufacturer

The manufacturer of the FDG6316P is ON Semiconductor (onsemi).

Applications

The FDG6316P has a broad range of potential applications due to its dual P-channel MOSFET array with low RDS(ON) and compact SC-70 package. It is suitable for various general-purpose applications, such as power supplies, battery management systems, motor drives, and others that require efficient switching and control.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	700 mA	Rds On - Drain-Source Resistance	270 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	2.4 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	300 mW
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDG6316P	Configuration	Dual
Fall Time	13 ns	Forward Transconductance - Min	2.5 S
Height	1.1 mm	Length	2 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	13 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	8 ns
Typical Turn-On Delay Time	5 ns	Width	1.25 mm
Part # Aliases	FDG6316P_NL	Unit Weight	0.000988 oz
Package/Case	TSSOP-6