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FDD8874 +BOM

N-Channel PowerTrench® MOSFET 30V, 116A, 5.1mΩ

  • Manufacturer:

    Fairchild Semiconductor

  • Mfr.Part #:

    FDD8874

  • Datasheet:

    FDD8874 Datasheet (PDF) pdf-icon

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Avalanche Energy Rating (Eas):

    240 mJ

FDD8874 General Description

The FDD8874 N-Channel MOSFET stands out as a tailored solution for enhancing the efficiency of DC/DC converters, regardless of whether they employ synchronous or conventional switching PWM controllers. Its optimized characteristics, including low gate charge, low rDS(ON), and fast switching speed, underscore its suitability for modern power electronics applications. By prioritizing these attributes, this MOSFET is well-equipped to play a pivotal role in elevating the performance and energy efficiency of the systems it is employed in

FDD8874

Key Features

  • Ultra-low noise operation
  • High-speed switching capability
  • RDSON = 5.8 mΩ @ VGS = 7V, ID = 30A
  • Suitable for high-reliability applications
  • Low input capacitance
  • RDSON = 6.2 mΩ @ VGS = 9V, ID = 40A

Application

  • A versatile product for you.

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code
Avalanche Energy Rating (Eas) 240 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 35 A Drain-source On Resistance-Max 0.0064 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Package/Case DPAK-3

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