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See Technical Specifications

FDD8870-F085 +BOM

Excellent thermal performance ensures reliable operation in high-power systems

Manufacturer:

onsemi
Mfr.Part #:

FDD8870-F085
Datasheet:

FDD8870-F085 Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

369AS
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for FDD8870-F085

FDD8870-F085 Information

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r_DS(ON) and fast switching speed.

Key Features

r_DS(ON) = 3.9mΩ, V_GS = 10V, I_D = 35A
r_DS(ON) = 4.4mΩ, V_GS = 4.5V, I_D = 35A
High performance trench technology for extremely low r_DS(ON)
Low gate charge
High power and current handling capability
Qualified to AEC Q101
RoHS Compliant

Application

Infotainment
Portable Navigation
Infotainment
Other
Power Train
Safety and Control
Comfort and Convenience
Body Electronics
Vehicle Security Systems
Other Automotive

Specifications

Status	Obsolete	Compliance	PbAHP
Case Outline	369AS	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	2500	ON Target	N
Channel Polarity	N-Channel	Configuration	Single
V(BR)DSS Min (V)	30	VGS Max (V)	20
VGS(th) Max (V)	2.5	ID Max (A)	160
PD Max (W)	160	RDS(on) Max @ VGS = 4.5 V (mΩ)	4.4
RDS(on) Max @ VGS = 10 V (mΩ)	3.9	Qg Typ @ VGS = 4.5 V (nC)	18
Qg Typ @ VGS = 10 V (nC)	91	Ciss Typ (pF)	5160
Pricing ($/Unit)	Price N/A	Package/Case	DPAK-3