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FDD3706 +BOM

N-Channel 20 V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount TO-252 (DPAK)

FDD3706 Information

Description

The onsemi FDD3706 is an N-Channel PowerTrench MOSFET component, offering high-performance characteristics for demanding applications. This device features a voltage rating up to 20V, current handling up to 50A, and a low resistance of 9mΩ at 10V. Its compact DPAK-3 package makes it suitable for space-restricted designs. The FDD3706's key benefits include reduced heat generation, minimal noise emission, ultra-low gate charge, fast switching speed with low latency, and rugged construction for long lifespan and reliability. It is suitable for high-power applications where efficient and reliable operation is crucial. Overall, the FDD3706 is an excellent choice for designers seeking a high-performance power MOSFET that can handle demanding tasks while minimizing power consumption and noise emission.

Features

According to the product information, the features of the FDD3706 are:

  • High efficiency with reduced heat generation
  • Low noise emission for quiet operation
  • Ultra-low gate charge for reduced power consumption
  • Fast switching speed with minimal latency
  • Compact size for reduced space requirements
  • Rugged construction for long lifespan and reliability
  • Additionally, other features mentioned include:
  • Fast rise time with minimal latency for precise control
  • Ultra-low leakage current for minimized standby power
  • High current handling up to 50A for demanding applications
  • Reduced noise emission for quiet operation
  • High-performance trench technology for enhanced reliability and performance
  • Low gate charge with reduced power consumption for increased efficiency

These features highlight the FDD3706's capabilities in terms of efficiency, reliability, and performance.

Package

According to the product information, the package type of FDD3706 is DPAK-3.

Pinout

The FDD3706 is a N-Channel PowerTrench MOSFET from ON Semiconductor, with a package type of DPAK-3.

The pin count for this device is 3:

  • Drain (D)
  • Source (S)
  • Gate (G)

This device is designed as an N-channel power MOSFET, suitable for high-frequency switching applications. It has a voltage rating of 20V and a current rating of 50A, with a low RDS(on) of 9mΩ at 10V.

Manufacturer

The manufacturer of the FDD3706 is ON Semiconductor (onsemi). ON Semiconductor is a leading global semiconductor company that designs, manufactures, and markets a wide range of semiconductor products, including power management, analog, embedded processing, and connectivity solutions. The company was founded in 1999 and is headquartered in Phoenix, Arizona, USA.

Equivalent

Based on the specifications, some equivalent products to FDD3706 (N-Channel PowerTrench MOSFET, 20V, 50A, 9mΩ) from other manufacturers are:

  • STP60NF50L (STMicroelectronics)
  • IPW65R50P (Infineon Technologies)
  • MTP70N50L (Motorola)

Please note that equivalent products may have slightly different specifications or packaging.

Specifications

Source Content uid FDD3706 Pbfree Code Yes
Part Life Cycle Code End Of Life Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 60 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 14.7 A Drain-source On Resistance-Max 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 44 W
Pulsed Drain Current-Max (IDM) 60 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Package/Case TO-252-3

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