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FDC6020C +BOM

PowerTrench Complementary MOSFET FDC6020C

FDC6020C General Description

Mosfet Array 20V 5.9A, 4.2A 1.2W Surface Mount SuperSOT™-6 FLMP

Key Features

  • Q1 –4.2 A, –20V. RDS(ON) = 55 mΩ @ VGS = – 4.5 V RDS(ON) = 82 mΩ @ VGS = – 2.5 V
  • Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON).
  • FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size

Specifications

Technology MOSFET (Metal Oxide) Configuration N and P-Channel
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.9A, 4.2A Rds On (Max) @ Id, Vgs 27mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 677pF @ 10V Power - Max 1.2W
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Package/Case SSOT-6

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