This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDB52N20TM +BOM

Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK

Manufacturer:

onsemi
Mfr.Part #:

FDB52N20TM
Datasheet:

FDB52N20TM Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDB52N20TM

Description

The FDB52N20TM is a unipolar N-MOSFET transistor from ON Semiconductor, designed for high-power applications. It has a voltage rating of up to 500V, current rating of 52A, and power rating of 357W. The device features low gate capacitance, high surge current capability, and fast switching times. This transistor is suitable for various applications, including high-frequency operation, high-speed switching, and high-power handling. Its reliability-tested design ensures a long lifespan and minimal failures. With its compact D2PAK-3 package (TO-263-2), the FDB52N20TM offers a reliable and efficient solution for power electronic designs. In summary, the FDB52N20TM is a robust and versatile N-MOSFET transistor ideal for demanding applications that require high voltage, current, and power handling.

Features

The onsemi FDB52N20TM N-MOSFET features:

High voltage rating (Max. 500V)
Low gate capacitance (Typ. 100pF)
High surge current capability (Typ. 3kA)
High reliability tested
Fast switching times (Typ. 10ns)

It is a unipolar N-MOSFET with a power rating of 357W and a current rating of 52A, packaged in D2PAK-3 (TO-263-2).

Package

The package type of FDB52N20TM is D2PAK-3, also known as TO-263-2.

Manufacturer

The manufacturer of the FDB52N20TM is ON Semiconductor (onsemi). ON Semiconductor is a leading global semiconductor company that designs, manufactures, and supplies power management, analog, and embedded processing solutions for various industries. The company was founded in 1999 as a spin-off from Motorola's semiconductor business and has since grown to become one of the largest independent semiconductor companies in the world.

Specifications

Source Content uid	FDB52N20TM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	10 Weeks
Avalanche Energy Rating (Eas)	2520 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	200 V
Drain Current-Max (ID)	52 A	Drain-source On Resistance-Max	0.049 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	245	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	357 W	Pulsed Drain Current-Max (IDM)	208 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Package/Case	D2PAK-3