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FDA20N50 +BOM

TO-3PN MOSFETs ROHS: Description for FDA20N50

FDA20N50 Information

Description

The FDA20N50 is a 500V N-channel MOSFET from ON Semiconductor (onsemi). It's packaged in a TO-3P-3 or SC-65-3 package type, which suggests it's designed for high-power applications. As an N-channel MOSFET, the FDA20N50 can be used to control DC motors, relays, and other low-voltage loads. Its 500V rating makes it suitable for use in automotive, industrial, or consumer electronics applications where high voltage is present. The device's key characteristics are its high voltage tolerance, moderate current handling capacity, and relatively low input capacitance. This makes it a good choice for applications that require efficient power switching with minimal electromagnetic interference (EMI). In summary, the FDA20N50 is an N-channel MOSFET designed for high-power switching in various industrial and consumer electronics applications.

Package

The package type of FDA20N50 is TO-3P-3 or SC-65-3, which are both types of power packages suitable for high-power MOSFET applications.

Pinout

Based on the information provided, the FDA20N50 is a MOSFET component from ON Semiconductor. The pin count for FDA20N50 is 3 pins (TO-3P-3 package). The function of FDA20N50 is a 500V N-channel MOSFET.

Manufacturer

The manufacturer of the FDA20N50 is ON Semiconductor (onsemi).

Applications

Based on the product information, as a semiconductor component, the FDA20N50 MOSFET is suitable for various electronic applications that require voltage regulation, high-side switching, or load driving. Specifically, it can be used in DC-DC converters, motor drives, power supplies, and industrial control systems. Due to its 500V rating, it's also applicable in high-voltage applications such as grid tie inverters, renewable energy systems, and uninterruptible power supplies (UPS).

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code
Additional Feature FAST SWITCHING Avalanche Energy Rating (Eas) 1110 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 22 A Drain-source On Resistance-Max 0.23 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 88 A
Qualification Status COMMERCIAL Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Package/Case TO-3PN-3

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