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FD800R17KE3B2NOSA1 +BOM

IGBT Modules IHV IHM T XHP 3 3-6 5K

FD800R17KE3B2NOSA1 General Description

IGBT Module Single Chopper 1700 V 1200 A 5200 W Chassis Mount Module

Infineon Technologies Corporation Inventory

Key Features

  • Enlarged Diode for regenerative operation
  • High reliability and robust module construction
  • High power density for compact inverter designs
  • Standardized housing
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series IHM-B
IGBT Type - Configuration Single Chopper
Voltage - Collector Emitter Breakdown (Max) 1700 V Current - Collector (Ic) (Max) 1200 A
Power - Max 5200 W Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 800A
Current - Collector Cutoff (Max) 5 mA Input Capacitance (Cies) @ Vce 72 nF @ 25 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Chassis Mount
Base Product Number FD800R17 RHoS no
PBFree no HalogenFree no
Product Category IGBT Modules Product Type IGBT Modules
Subcategory IGBTs Part # Aliases FD800R17KE3_B2 SP000100629
Package/Case BGA

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FD800R17KE3B2NOSA1 Datasheet PDF

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